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VNQ05XSP16TR-E Datasheet(PDF) 9 Page - STMicroelectronics

Part # VNQ05XSP16TR-E
Description  QUAD CHANNEL HIGH SIDE SOLID STATE RELAY
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

VNQ05XSP16TR-E Datasheet(HTML) 9 Page - STMicroelectronics

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VNQ05XSP16
APPLICATION SCHEMATIC
VCC
OUTPUT2
C. SENSE
Dld
+5V
Rprot
OUTPUT1
RSENSE
INPUT1
INPUT2
µC
Rprot
Rprot
Rprot
INPUT3
INPUT4
DGND
RGND
VGND
GND
OUTPUT3
Rprot
Rprot
Rprot
Rprot
OUTPUT4
Notes: Input1,2,3,4, SELA, SELB, SENSENABLE have the same structure.
SELA
SESB
SENSENABLE
GND
PROTECTION
NETWORK
AGAINST
REVERSE BATTERY
Solution 1: Resistor in the ground line (RGND only). This
can be used with any type of load.
The following is an indication on how to dimension the
RGND resistor.
1) RGND ≤ 600mV / (IS(on)max).
2) RGND ≥ (-VCC) / (-IGND)
where -IGND is the DC reverse ground pin current and can
be found in the absolute maximum rating section of the
device’s datasheet.
Power Dissipation in RGND (when VCC<0: during reverse
battery situations) is:
PD= (-VCC)
2/R
GND
This resistor can be shared amongst several different
HSD. Please note that the value of this resistor should be
calculated with formula (1) where IS(on)max becomes the
sum of the maximum on-state currents of the different
devices.
Please note that if the microprocessor ground is not
common with the device ground then the RGND will
produce a shift (IS(on)max * RGND) in the input thresholds
and the status output values. This shift will vary
depending on how many devices are ON in the case of
several high side drivers sharing the same RGND.
If the calculated power dissipation leads to a large
resistor or several devices have to share the same
resistor then the ST suggests to utilize Solution 2 (see
below).
Solution 2: A diode (DGND) in the ground line.
A resistor (RGND=1kΩ) should be inserted in parallel to
DGND if the device will be driving an inductive load.
This small signal diode can be safely shared amongst
several different HSD. Also in this case, the presence of
the ground network will produce a shift (
≅600mV) in the
input threshold and the status output values if the
microprocessor ground is not common with the device
ground. This shift will not vary if more than one HSD
shares the same diode/resistor network.
LOAD DUMP PROTECTION
Dld is necessary (Voltage Transient Suppressor) if the
load dump peak voltage exceeds VCC max DC rating.
The same applies if the device will be subject to
transients on the VCC line that are greater than the ones
shown in the ISO T/R 7637/1 table.
µC I/Os PROTECTION:
If a ground protection network is used and negative
transients are present on the VCC line, the control pins
will be pulled negative. ST suggests to insert a resistor
(Rprot) in line to prevent the µC I/Os pins to latch-up.
The value of these resistors is a compromise between the
leakage current of
µC and the current required by the
HSD I/Os (Input levels compatibility) with the latch-up
limit of
µC I/Os.
-VCCpeak/Ilatchup ≤ Rprot ≤ (VOHµC-VIH-VGND) / IIHmax
For VCCpeak= - 100V and Ilatchup ≥ 20mA; VOHµC ≥ 4.5V
5k
Ω ≤ R
prot ≤ 65kΩ.
Recommended Rprot value is 10kΩ.
A/D
CPAR
RSENSE x CPAR <10µs
CFILTER
1


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