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STS11N3LLH5 Datasheet(PDF) 1 Page - STMicroelectronics |
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STS11N3LLH5 Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 12 page June 2011 Doc ID 15982 Rev 2 1/12 12 STS11N3LLH5 N-channel 30 V, 0.0117 Ω, 11 A, SO-8 STripFET™ V Power MOSFET Features ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ Very low switching gate charge ■ High avalanche ruggedness ■ Low gate drive power losses Applications ■ Switching applications Description This device is an N-channel Power MOSFET developed using STMicroelectronics' STripFET™V technology. The device has been optimized to achieve very low on-state resistance, contributing to an FOM that is among the best in its class.. Figure 1. Internal schematic diagram Type VDSS RDS(on) max ID STS11N3LLH5 30 V < 0.0132 Ω 11 A (1) 1. The value is rated according Rthj-pcb SO-8 1 4 5 8 Table 1. Device summary Order code Marking Package Packaging STS11N3LLH5 11D3L SO-8 Tape and reel www.st.com |
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