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BR24T04FVT-W Datasheet(PDF) 2 Page - Rohm

Part # BR24T04FVT-W
Description  High Reliability Serial EEPROMs
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Manufacturer  ROHM [Rohm]
Direct Link  http://www.rohm.com
Logo ROHM - Rohm

BR24T04FVT-W Datasheet(HTML) 2 Page - Rohm

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Technical Note
2/21
BR24T□□□□Series
www.rohm.com
2011.03 - Rev.A
© 2011 ROHM Co., Ltd. All rights reserved.
●Absolute maximum ratings (Ta=25℃)
●Memory cell characteristics (Ta=25℃, Vcc=1.7~
5.5V)
Parameter
Symbol
Ratings
Unit
Impressed voltage
VCC
-0.3~+6.5
V
Permissible
dissipation
Pd
450 (SOP8)
*1
mW
450 (SOP-J8)
*2
300 (SSOP-B8)
*3
330 (TSSOP-B8)
*4
310 (TSSOP-B8J)
*5
310 (MSOP8)
*6
300 (VSON008X2030)
*7
800 (DIP-T8)
*8
Storage
temperature range
Tstg
-65~+150
Action
temperature range
Topr
-40~+85
Terminal voltage
-0.3~Vcc+1.0
*9
V
Junction
temperature
*10
Tjmax
150
*1,*2 When using at Ta=25℃ or higher 4.5mW to be reduced per 1℃.
*3,*7 When using at Ta=25℃ or higher 3.0mW to be reduced per 1℃.
*4
When using at Ta=25℃ or higher 3.3mW to be reduced per 1℃.
*5, *6 When using at Ta=25℃ or higher 3.1mW to be reduced per 1℃.
*8
When using at Ta=25℃ or higher 8.1mW to be reduced per 1℃.
*9
The Max value of Terminal Voltage is not over 6.5V.
When the pulse width is 50ns or less, the Min value of
Terminal Voltage is not under -1.0V. (BR24T16/32/64/128/256/512/1M-W)
the Min value of Terminal Voltage is not under -0.8V. (BR24T01/02/04/08-W)
*10
Junction temperature at the storage condition.
Parameter
Limits
Unit
Min.
Typ.
Max
Number of data
rewrite times
*1
1,000,000
Times
Data hold years
*1
40
Years
*1Not 100% TESTED
●Recommended operating conditions
Parameter
Symbol
Ratings
Unit
Power source
voltage
Vcc
1.7~5.5
V
Input voltage
VIN
0~Vcc
●Electrical characteristics (Unless otherwise specified, Ta=-40~+85℃, VCC=1.7~5.5V)
Parameter
Symbol
Limits
Unit
Conditions
Min.
Typ.
Max.
“H” input voltage 1
VIH1
0.7Vcc
Vcc+1.0
V
“L” input voltage 1
VIL1
-0.3
*2
0.3Vcc
V
“L” output voltage 1
VOL1
0.4
V
IOL=3.0mA, 2.5V≦Vcc≦5.5V (SDA)
“L” output voltage 2
VOL2
0.2
V
IOL=0.7mA, 1.7V≦Vcc<2.5V (SDA)
Input leak current
ILI
-1
1
µA
VIN=0~Vcc
Output leak current
ILO
-1
1
µA
VOUT=0~Vcc (SDA)
Current consumption
at action
ICC1
2.0
mA
Vcc=5.5V,fSCL=400kHz, tWR=5ms,
Byte write, Page write
BR24T01/02/04/08/16/32/64-W
2.5
Vcc=5.5V,fSCL=400kHz, tWR=5ms,
Byte write, Page write
BR24T128/256-W
4.5
Vcc=5.5V,fSCL=400kHz, tWR=5ms,
Byte write, Page write
BR24T512/1M-W
ICC2
0.5
mA
Vcc=5.5V,fSCL=400kHz
Random read, current read, sequential read
BR24T01/02/04/08/16/32/64/128/256-W
2.0
Vcc=5.5V,fSCL=400kHz
Random read, current read, sequential read
BR24T512/1M-W
Standby current
ISB
2.0
µA
Vcc=5.5V, SDA・SCL=Vcc
A0,A1,A2=GND,WP=GND
BR24T01/02/04/08/16/32/64/128/256-W
3.0
Vcc=5.5V, SDA・SCL=Vcc
A0, A1, A2=GND, WP=GND
BR24T512/1M-W
○ Radiation resistance design is not made.
*1
BR24T512/1M-W is a target value because it is developing.
*2
When the pulse width is 50ns or less, it is -1.0V. (BR24T16/32/64/128/256/512/1M-W)
When the pulse width is 50ns or less, it is -0.8V. (BR24T01/02/04/08-W)


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