IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXTA02N450HV

IXTT02N450HV

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or moreof the following U.S. patents: 4,860,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

60

100

mS

C

iss

256

pF

C

oss

V

19

pF

C

rss

5.5

pF

R

Gi

Gate Input Resistance

76

Ω

t

d(on)

17

ns

t

r

48

ns

t

d(off)

28

ns

t

f

143

ns

Q

g(on)

10.4

nC

Q

gs

V

3.4

nC

Q

gd

5.0

nC

R

thJC

1.1

°C/W

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

I

S

V

200 mA

I

SM

Repetitive, Pulse Width Limited by T

JM

800 mA

V

SD

I

1.5

V

t

rr

I

1.6

μs

Note:

1. Pulse test, t

≤ 300μs, duty cycle, d ≤ 2%.

ADVANCE TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived

from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a

"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test

conditions, and dimensions without notice.

Resistive Switching Times

V

R

TO-263 (VHV) Outline

TO-268 (VHV) Outline

PIN: 1 - Gate

2 - Source

3 - Drain

PIN:

1 - Gate

2 - Source

3 - Drain