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IXTA02N450HV Datasheet(PDF) 2 Page - IXYS Corporation |
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IXTA02N450HV Datasheet(HTML) 2 Page - IXYS Corporation |
2 / 5 page IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXTA02N450HV IXTT02N450HV IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 Symbol Test Conditions Characteristic Values (T J = 25°C, Unless Otherwise Specified) Min. Typ. Max. g fs V DS = 60V, ID = 30mA, Note 1 60 100 mS C iss 256 pF C oss V GS = 0V, VDS = 25V, f = 1MHz 19 pF C rss 5.5 pF R Gi Gate Input Resistance 76 Ω t d(on) 17 ns t r 48 ns t d(off) 28 ns t f 143 ns Q g(on) 10.4 nC Q gs V GS = 10V, VDS = 1kV, ID = 0.5 • ID25 3.4 nC Q gd 5.0 nC R thJC 1.1 °C/W Source-Drain Diode Symbol Test Conditions Characteristic Values (T J = 25°C, Unless Otherwise Specified) Min. Typ. Max. I S V GS = 0V 200 mA I SM Repetitive, Pulse Width Limited by T JM 800 mA V SD I F = IS, VGS = 0V, Note 1 1.5 V t rr I F = 200mA, -di/dt = 50A/μs, VR = 100V 1.6 μs Note: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. Resistive Switching Times V GS = 10V, VDS = 500V, ID = 0.5 • ID25 R G = 10Ω (External) TO-263 (VHV) Outline TO-268 (VHV) Outline PIN: 1 - Gate 2 - Source 3 - Drain PIN: 1 - Gate 2 - Source 3 - Drain |
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