Technical Note

2/18

www.rohm.com

2010.12 - Rev.B

© 2010 ROHM Co., Ltd. All rights reserved.

●Absolute maximum ratings (Ta=25°C)

●Memory cell characteristics (Ta=25°C , Vcc=1.7V～5.5V)

Parameter

Symbol

Limits

Unit

Impressed

voltage

Vcc

-0.3～+6.5

V

Permissible

dissipation

Pd

450(SOP8)

*1

mW

450(SOP-J8)

*2

300(SSOP-B8)

*3

330(TSSOP-B8)

*4

310(MSOP8)

*5

310(TSSOP-B8J)

*6

300(VSON008X2030)

*7

Storage

temperature

range

Tstg

-65～+125

℃

Operating

temperature

range

Topr

-40～+85

℃

Terminal

voltage

－

-0.3～Vcc+0.3

V

* When using at Ta=25℃ or higher, 4.5mW(*1, *2),

3.0mW(*3, *7),3.3mW(*4), 3.1mW(*5, *6) to be reduced per 1℃

●Electrical characteristics (Unless otherwise specified, Ta=-40～+85°C, Vcc=1.7～5.5V)

Parameter

Symbol

Limits

Unit

Conditions

Min.

Typ.

Max.

“H” Input Voltage1

VIH1

0.7xVcc

－

Vcc+0.3

V

1.7≦Vcc≦5.5V

“L” Input Voltage1

VIL1

-0.3

－

0.3xVcc

V

1.7≦Vcc≦5.5V

“L” Output Voltage1

VOL1

0

－

0.4

V

IOL=2.1mA, 2.5≦Vcc<5.5V

“L” Output Voltage2

VOL2

0

－

0.2

V

IOL=1.0mA, 1.7≦Vcc<2.5V

“H” Output Voltage1

VOH1

Vcc-0.2

－

Vcc

V

IOH=-0.4mA, 2.5V≦Vcc<5.5V

“H” Output Voltage2

VOH2

Vcc-0.2

－

Vcc

V

IOH=-100µA, 1.7≦Vcc<2.5V

Input Leakage Current

ILI

-1

－

1

Output Leakage Current

ILO

-1

－

1

Operating Current Write

ICC1

－

－

0.5

*1

mA

Vcc=1.8V, fSCK=5MHz, tE/W=5ms

Byte Write, Page Write, Write Status register

1

*2

ICC2

－

－

1

*1

mA

Vcc=2.5V, fSCK=10MHz, tE/W=5ms

Byte Write, Page Write, Write Status register

1.5

*2

ICC3

－

－

2

*1

mA

Vcc=5.5V, fSCK=20MHz, tE/W=5ms

Byte Write, Page Write, Write Status register

3

*2

Operating Current Read

ICC4

－

－

1

mA

Vcc=1.8V, fSCK=5MHz, SO=OPEN

Read, Read Status Register

ICC5

－

－

1

mA

Vcc=2.5V, fSCK=2MHz, SO=OPEN

Read, Read Status Register

ICC6

－

－

1.5

mA

Vcc=2.5V, fSCK=5MHz, SO=OPEN

Read, Read Status Register

ICC7

－

－

2

mA

Vcc=2.5V, fSCK=10MHz, SO=OPEN

Read, Read Status Register

ICC8

－

－

2

mA

Vcc=5.5V, fSCK=5MHz, SO=OPEN

Read, Read Status Register

ICC9

－

－

4

mA

Vcc=5.5V, fSCK=10MHz, SO=OPEN

Read, Read Status Register

ICC10

－

－

8

mA

Vcc=5.5V, fSCK=20MHz, SO=OPEN

Read, Read Status Register

Standby Current

ISB

－

－

2

μA

Vcc=5.5V, SO=OPEN

CSB=HOLDB=WPB=Vcc, SCK=SI=Vcc or GND

*1

BR25S320/640-W

*2

BR25S128/256-W

○

Radiation resistance design is not made

Parameter

Limits

Unit

Min.

Min.

Min.

Number of

data rewrite times

*1

1,000,000

－

－

Time

Data hold years

*1

40

－

－

Year

Not 100% TESTED

●Recommended action conditions

Parameter

Symbol

Limits

Unit

Power source voltage

1.7～5.5

V

Input voltage

0～Vcc

●Input / output capacity (Ta=25°C, frequency=5MHz)

Parameter

Symbol Conditions

Min.

Max.

Unit

Input capacity

*1

－

8

pF

Output capacity

*1

－

8

*1

Not 100% TESTED.