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BR24T1M-W Datasheet(PDF) 2 Page - Rohm |
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BR24T1M-W Datasheet(HTML) 2 Page - Rohm |
2 / 22 page Technical Note 2/21 BR24T□□□□Series www.rohm.com 2011.03 - Rev.A © 2011 ROHM Co., Ltd. All rights reserved. ●Absolute maximum ratings (Ta=25℃) ●Memory cell characteristics (Ta=25℃, Vcc=1.7~ 5.5V) Parameter Symbol Ratings Unit Impressed voltage VCC -0.3~+6.5 V Permissible dissipation Pd 450 (SOP8) *1 mW 450 (SOP-J8) *2 300 (SSOP-B8) *3 330 (TSSOP-B8) *4 310 (TSSOP-B8J) *5 310 (MSOP8) *6 300 (VSON008X2030) *7 800 (DIP-T8) *8 Storage temperature range Tstg -65~+150 ℃ Action temperature range Topr -40~+85 ℃ Terminal voltage ‐ -0.3~Vcc+1.0 *9 V Junction temperature *10 Tjmax 150 ℃ *1,*2 When using at Ta=25℃ or higher 4.5mW to be reduced per 1℃. *3,*7 When using at Ta=25℃ or higher 3.0mW to be reduced per 1℃. *4 When using at Ta=25℃ or higher 3.3mW to be reduced per 1℃. *5, *6 When using at Ta=25℃ or higher 3.1mW to be reduced per 1℃. *8 When using at Ta=25℃ or higher 8.1mW to be reduced per 1℃. *9 The Max value of Terminal Voltage is not over 6.5V. When the pulse width is 50ns or less, the Min value of Terminal Voltage is not under -1.0V. (BR24T16/32/64/128/256/512/1M-W) the Min value of Terminal Voltage is not under -0.8V. (BR24T01/02/04/08-W) *10 Junction temperature at the storage condition. Parameter Limits Unit Min. Typ. Max Number of data rewrite times *1 1,000,000 - - Times Data hold years *1 40 - - Years *1Not 100% TESTED ●Recommended operating conditions Parameter Symbol Ratings Unit Power source voltage Vcc 1.7~5.5 V Input voltage VIN 0~Vcc ●Electrical characteristics (Unless otherwise specified, Ta=-40~+85℃, VCC=1.7~5.5V) Parameter Symbol Limits Unit Conditions Min. Typ. Max. “H” input voltage 1 VIH1 0.7Vcc - Vcc+1.0 V “L” input voltage 1 VIL1 -0.3 *2 - 0.3Vcc V “L” output voltage 1 VOL1 - - 0.4 V IOL=3.0mA, 2.5V≦Vcc≦5.5V (SDA) “L” output voltage 2 VOL2 - - 0.2 V IOL=0.7mA, 1.7V≦Vcc<2.5V (SDA) Input leak current ILI -1 - 1 µA VIN=0~Vcc Output leak current ILO -1 - 1 µA VOUT=0~Vcc (SDA) Current consumption at action ICC1 - - 2.0 mA Vcc=5.5V,fSCL=400kHz, tWR=5ms, Byte write, Page write BR24T01/02/04/08/16/32/64-W - - 2.5 Vcc=5.5V,fSCL=400kHz, tWR=5ms, Byte write, Page write BR24T128/256-W - - 4.5 Vcc=5.5V,fSCL=400kHz, tWR=5ms, Byte write, Page write BR24T512/1M-W ICC2 - - 0.5 mA Vcc=5.5V,fSCL=400kHz Random read, current read, sequential read BR24T01/02/04/08/16/32/64/128/256-W - - 2.0 Vcc=5.5V,fSCL=400kHz Random read, current read, sequential read BR24T512/1M-W Standby current ISB - - 2.0 µA Vcc=5.5V, SDA・SCL=Vcc A0,A1,A2=GND,WP=GND BR24T01/02/04/08/16/32/64/128/256-W - - 3.0 Vcc=5.5V, SDA・SCL=Vcc A0, A1, A2=GND, WP=GND BR24T512/1M-W ○ Radiation resistance design is not made. *1 BR24T512/1M-W is a target value because it is developing. *2 When the pulse width is 50ns or less, it is -1.0V. (BR24T16/32/64/128/256/512/1M-W) When the pulse width is 50ns or less, it is -0.8V. (BR24T01/02/04/08-W) |
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