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FQP85N06 Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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FQP85N06 Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 8 page May 2001 QFETTM ©2001 Fairchild Semiconductor Corporation Rev. A1. May 2001 FQP85N06 60V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products. Features • 85A, 60V, RDS(on) = 0.010Ω @VGS = 10 V • Low gate charge ( typical 86 nC) • Low Crss ( typical 165 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • 175 °C maximum junction temperature rating Absolute Maximum Ratings T C = 25°C unless otherwise noted Thermal Characteristics Symbol Parameter FQP85N06 Units VDSS Drain-Source Voltage 60 V ID Drain Current - Continuous (TC = 25°C) (Note 6) 85 A - Continuous (TC = 100°C) 60 A IDM Drain Current - Pulsed (Note 1) 300 A VGSS Gate-Source Voltage ± 25 V EAS Single Pulsed Avalanche Energy (Note 2) 810 mJ IAR Avalanche Current (Note 1) 85 A EAR Repetitive Avalanche Energy (Note 1) 16.0 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 7.0 V/ns PD Power Dissipation (TC = 25°C) 160 W - Derate above 25°C 1.07 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +175 °C TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 °C Symbol Parameter Typ Max Units RθJC Thermal Resistance, Junction-to-Case -- 0.94 °C/W RθCS Thermal Resistance, Case-to-Sink 0.5 -- °C/W RθJA Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W ! " ! ! ! " " " ! " ! ! ! " " " S D G TO-220 FQP Series G S D |
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