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FQP6P25 Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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FQP6P25 Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 8 page ©2000 Fairchild Semiconductor International April 2000 Rev. A, April 2000 QFET QFET QFET QFETTM FQP6P25 250V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters. Features • -6.0A, -250V, RDS(on) = 1.1Ω @VGS = -10 V • Low gate charge ( typical 21 nC) • Low Crss ( typical 20 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability Absolute Maximum Ratings T C = 25°C unless otherwise noted Thermal Characteristics Symbol Parameter FQP6P25 Units VDSS Drain-Source Voltage -250 V ID Drain Current - Continuous (TC = 25°C) -6.0 A - Continuous (TC = 100°C) -3.8 A IDM Drain Current - Pulsed (Note 1) -24 A VGSS Gate-Source Voltage ±30 V EAS Single Pulsed Avalanche Energy (Note 2) 540 mJ IAR Avalanche Current (Note 1) -6.0 A EAR Repetitive Avalanche Energy (Note 1) 9.0 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) -5.5 V/ns PD Power Dissipation (TC = 25°C) 90 W - Derate above 25°C 0.72 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds 300 °C Symbol Parameter Typ Max Units RθJC Thermal Resistance, Junction-to-Case -- 1.39 °C W RθCS Thermal Resistance, Case-to-Sink 0.5 -- °C W RθJA Thermal Resistance, Junction-to-Ambient -- 62.5 °C W TO-220 FQP Series G S D ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! S D G |
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