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LMH6703 Datasheet(PDF) 2 Page - Texas Instruments |
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LMH6703 Datasheet(HTML) 2 Page - Texas Instruments |
2 / 22 page LMH6703 SNOSAF2D – FEBRUARY 2005 – REVISED MARCH 2013 www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. Absolute Maximum Ratings (1) Human Body Model 2000V ESD Tolerance (2) Machine Model 200V VS ±6.75V IOUT (3) Common Mode Input Voltage V− to V+ Maximum Junction Temperature +150°C Storage Temperature Range −65°C to +150°C Infrared or Convection (20 sec.) 235°C Soldering Information Wave Soldering (10 sec.) 260°C (1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is intended to be functional, but specific performance is not ensured. For specifications, see the Electrical Characteristics tables. (2) Human body model: 1.5 k Ω in series with 100 pF. Machine model: 0Ω in series with 200 pF. (3) The maximum output current (IOUT) is determined by device power dissipation limitations. Operating Ratings (1) Operating Temperature Range −40°C to +85°C Supply Voltage Range ±4V to ±6V 6 Pin SOT-23 208°C/W Package Thermal Resistance ( θJA) (2) 8 Pin SOIC 160°C/W (1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is intended to be functional, but specific performance is not ensured. For specifications, see the Electrical Characteristics tables. (2) The maximum power dissipation is a function of TJ(MAX), θJA and TA. The maximum allowable power dissipation at any ambient temperature is PD = (TJ(MAX) — TA)/ θJA. All numbers apply for package soldered directly into a 2 layer PC board with zero air flow. 2 Submit Documentation Feedback Copyright © 2005–2013, Texas Instruments Incorporated Product Folder Links: LMH6703 |
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