FZT949 datasheet(4/5 Pages) DIODES

Part #	FZT949

Description	SOT223 PNP SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS

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Manufacturer	DIODES [Diodes Incorporated]

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FZT949

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT

CONDITIONS.

Collector-Base Breakdown

Voltage

V(BR)CBO

-50

-80

V

IC=-100µA

Collector-Emitter

Breakdown Voltage

V(BR)CER

-50

-80

V

IC=-1µA, RB ≤1kΩ

Collector-Emitter

Breakdown Voltage

V(BR)CEO

-30

-45

V

IC=-10mA*

Emitter-Base Breakdown

Voltage

V(BR)EBO

-6

-8

V

IE=-100µA

Collector Cut-Off Current

ICBO

-50

-1

nA

µA

VCB=-40V

VCB=-40V,

Tamb=100°C

Collector Cut-Off Current

ICER

R

≤1kΩ

-50

-1

nA

µA

VCB=-40V

VCB=-40V,

Tamb=100°C

Emitter Cut-Off Current

IEBO

-10

nA

VEB=-6V

Collector-Emitter Saturation

Voltage

VCE(sat)

-50

-85

-190

-350

-75

-140

-270

-440

mV

IC=-0.5A, IB=-20mA*

IC=-1A, IB=-20mA*

IC=-2A, IB=-200mA*

IC=-5.5A, IB=-500mA*

Base-Emitter

Saturation Voltage

VBE(sat)

-1100

-1250

mV

IC=-5.5A, IB=-500mA*

Base-Emitter

Turn-On Voltage

VBE(on)

-900

-1060

mV

IC=-5.5A, VCE=-1V*

Static Forward

Current Transfer Ratio

hFE

100

75

200

140

35

300

IC=-10mA, VCE =-1V

IC=-1A, VCE =-1V*

IC=-5A, VCE =-1V*

IC=-20A, VCE =-2V*

Transition Frequency

fT

100

MHz

IC=-100mA, VCE=-10V

f=50MHz

Output Capacitance

Cobo

122

pF

VCB=-10V, f=1MHz

Switching Times

ton

toff

120

130

ns

IC=-4A, IB1=-400mA

IB2=400mA, VCC=-10V

*Measured under pulsed conditions. Pulse width=300

µs. Duty cycle ≤2%

Spice parameter data is available upon request for this device

RCE(sat)44m

Ω at 4.5A

TBA

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