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ACST1210-7GTR Datasheet(PDF) 2 Page - STMicroelectronics |
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ACST1210-7GTR Datasheet(HTML) 2 Page - STMicroelectronics |
2 / 13 page Characteristics ACST12 2/13 Doc ID 15238 Rev 4 1 Characteristics Table 2. Absolute ratings (limiting values) Symbol Parameter Value Unit IT(RMS) On-state rms current full sine wave TO-220AB D2PAK Tc = 104 °C 12 A D2PAK with 1cm2 of Cu Tamb = 47 °C 2 ITSM Non repetitive surge peak on-state current Tj initial = 25 °C,( full cycle sine wave) F = 60 Hz tp = 16.7 ms 126 A F = 50 Hz tp = 20.0 ms 120 A I2tI2t for fuse selection tp = 10 ms 95 A2s dI/dt Critical rate of rise on-state current IG = 2 x IGT, (tr ≤ 100 ns) F = 120 Hz Tj = 125 °C 100 A/µs VPP Non repetitive line peak pulse voltage (1) Tj = 125 °C 2 kV PG(AV) Average gate power dissipation Tj = 125 °C 0.1 W PGM Peak gate power dissipation (tp = 20 µs) Tj = 125 °C 10 W IGM Peak gate current (tp = 20 µs) Tj = 125 °C 1.6 A Tstg Storage temperature range - 40 to + 150 °C Tj Operating junction temperature range - 40 to + 125 °C Tl maximum lead soldering temperature during 10 s (at 3 mm from plastic case) 260 °C 1. According to test described in IEC 61000-4-5 standard and Figure 19 Table 3. Electrical characteristics Symbol Test conditions Quadrant Tj Value Unit ACST1210-7 ACST1235-7 Unit IGT (1) VOUT = 12 V, RL = 33 Ω I - II - III 25 °C MAX. 10 35 mA VGT VOUT = 12 V, RL = 33 Ω I - II - III 25 °C MAX. 1.0 V VGD VOUT = VDRM, RL = 3.3 Ω I - II - III 125 °C MIN. 0.2 V IH (2) IOUT = 500 mA 25 °C MAX. 30 50 mA IL IG = 1.2 x IGT I - II - III 25 °C MAX. 50 70 mA dV/dt(2) VOUT = 67% VDRM, gate open 125 °C MIN. 200 2000 V/µs (dI/dt)c(2) (dV/dt)c = 15 V/µs 125 °C MIN. 5.3 A/ms Without snubber MIN. 14 VCL ICL = 0.1 mA, tp = 1 ms 25 °C MIN. 850 V 1. Minimum IGT is guaranteed at 5% of IGT max 2. For both polarities of OUT pin referenced to COM pin |
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