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IDTQS3VH125 Datasheet(PDF) 2 Page - Integrated Device Technology |
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IDTQS3VH125 Datasheet(HTML) 2 Page - Integrated Device Technology |
2 / 8 page 2 INDUSTRIAL TEMPERATURE RANGE IDTQS3VH125 2.5V / 3.3V QUAD ACTIVE LOW, HIGH BANDWIDTH SWITCH PIN CONFIGURATION Symbol Description Max Unit VTERM(2) SupplyVoltage to Ground –0.5 to +4.6 V VTERM(3) DC Switch Voltage VS –0.5 to +5.5 V VTERM(3) DC Input Voltage VIN –0.5 to +5.5 V VAC AC Input Voltage (pulse width ≤20ns) –3 V IOUT DC Output Current (max. sink current/pin) 120 mA TSTG Storage Temperature –65 to +150 °C ABSOLUTE MAXIMUM RATINGS(1) NOTES: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2. VCC terminals. 3. All terminals except VCC . Symbol Parameter(1) Typ. Max. Unit CIN Control Inputs 3 5 pF CI/O Quickswitch Channels (Switch OFF) 4 6 pF CI/O Quickswitch Channels (Switch ON) 8 12 pF CAPACITANCE (TA = +25°C, F = 1MHz, VIN = 0V, VOUT = 0V) NOTE: 1. This parameter is guaranteed but not production tested. Pin Names I/O Description 1A - 4A I/O Bus A 1Y - 4Y I/O Bus Y 1OE - 4OE I Output Enable PIN DESCRIPTION NOTE: 1. H = HIGH Voltage Level L = LOW Voltage Level X = Don't Care OE A Y Function L H H Connect L L L Connect H X X Disconnect FUNCTION TABLE(1) QSOP TOP VIEW SOIC TOP VIEW NC VCC 1OE 4OE 1A 4A 1Y 4Y 2OE 3OE 2A 3A 2Y 3Y GND NC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 VCC 1OE 4OE 1A 4A 1Y 4Y 2OE 3OE 2A 3A 2Y 3Y 1 2 3 4 5 6 7 8 9 10 11 12 13 14 GND |
Similar Part No. - IDTQS3VH125_13 |
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Similar Description - IDTQS3VH125_13 |
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