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NCP1254 Datasheet(PDF) 4 Page - ON Semiconductor |
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NCP1254 Datasheet(HTML) 4 Page - ON Semiconductor |
4 / 25 page NCP1254 http://onsemi.com 4 Table 3. MAXIMUM RATINGS TABLE Symbol Rating Value Unit Vcc Power Supply voltage, Vcc pin, continuous voltage −0.3 to 35 V Maximum voltage on low−power pins CS, FB and OPP −0.3 to 10 V VDRV Maximum voltage on drive pin −0.3 to Vcc+0.3 V IOPP Maximum injected current into the OPP pin −2 mA ISCR Maximum continuous current into the Vcc pin while in latched mode 3 mA RθJ−A Thermal Resistance Junction−to−Air 360 °C/W TJ,max Maximum Junction Temperature 150 °C Iscr Maximum continuous current into Vcc pin when latched 3 mA Storage Temperature Range −60 to +150 °C HBM Human Body Model ESD Capability (All pins except HV) per JEDEC JESD22−A114F 2 kV MM Machine Model ESD Capability (All pins except DRV) per JEDEC JESD22−A115C 200 V CDM Charged−Device Model ESD Capability per JEDEC JESD22−C101E 500 V Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. This device contains latch−up protection and exceeds 100 mA per JEDEC Standard JESD78. Table 4. ELECTRICAL CHARACTERISTICS (For typical values TJ = 25°C, for min/max values TJ = −40°C to +125°C, Max TJ = 150°C, Vcc = 12 V unless otherwise noted) Symbol Rating Pin Min Typ Max Unit SUPPLY SECTION VCCON VCC increasing level at which driving pulses are authorized 5 15.8 18 20 V VCC(min) VCC decreasing level at which driving pulses are stopped 5 8 8.8 9.4 V VCCHYST Hysteresis VccON−Vcc(min) 5 6 − − V VZENER Clamped Vcc when latched off @ ICC = 500 mA 5 − 7 − V ICC1 Start−up current 5 − − 15 mA ICC2 Internal IC consumption with VFB = 3.2 V, FSW = 65 kHz and CL = 0 5 − 1.4 2.2 mA ICC3 Internal IC consumption with VFB = 3.2 V, FSW = 65 kHz and CL = 1 nF 5 − 2.1 3.0 mA ICC4 Internal IC consumption with VFB = 4.5 V, FSW = 130 kHz and CL = 0 5 − 1.7 2.5 mA ICC5 Internal IC consumption with VFB = 4.5 V, FSW = 130 kHz and CL = 1 nF 5 − 3.1 4.0 mA ICCstby Internal IC consumption while in skip mode (Vcc = 12 V, driving a typical 6−A/600−V MOSFET) 750 mA ICCLATCH Current flowing into VCC pin that keeps the controller latched: Tj = −40°C to 125°C 5 40 mA Rlim SCR current−limit series resistor 5 4 kW DRIVE OUTPUT Tr Output voltage rise−time @ CL = 1 nF, 10−90% of output signal 6 − 40 − ns Tf Output voltage fall−time @ CL = 1 nF, 10−90% of output signal 6 − 30 − ns ROH Source resistance 6 − 13 − W ROL Sink resistance 6 − 6 − W Isource Peak source current, VGS = 0 V (Note 2) 6 300 mA Isink Peak sink current, VGS = 12 V (Note 2) 6 500 mA 2. Guaranteed by design 3. See characterization table for linearity over negative bias voltage – we recommend keeping the level on pin 3 below −300 mV. 4. A 1−MW resistor is connected from pin 4 to the ground for the measurement. |
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