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VNS1NV04PTR-E Datasheet(PDF) 7 Page - STMicroelectronics |
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VNS1NV04PTR-E Datasheet(HTML) 7 Page - STMicroelectronics |
7 / 28 page VNN1NV04P-E, VNS1NV04P-E Electrical specifications Doc ID 15586 Rev 2 7/28 2.2 Thermal data 2.3 Electrical characteristics Table 3. Thermal data Symbol Parameter Max value Unit SOT-223 SO-8 Rthj-case Thermal resistance junction-case 18 °C/W Rthj-lead Thermal resistance junction-lead 15 °C/W Rthj-amb Thermal resistance junction-ambient 70(1) 1. When mounted on a standard single-sided FR4 board with 50 mm2 of Cu (at least 35 μm thick) connected to all DRAIN pins 65(1) °C/W Table 4. Electrical characteristics Symbol Parameter Test conditions Min Typ Max Unit Off (-40 °C<Tj<150 °C, unless otherwise specified) VCLAMP Drain-source clamp voltage VIN=0 V; ID=0.5 A 40 45 55 V VCLTH Drain-source clamp threshold voltage VIN=0 V; ID=2 mA 36 V VINTH Input threshold voltage VDS=VIN; ID=1 mA 0.5 2.5 V IISS Supply current from input pin VDS=0 V; VIN=5 V 100 150 µA VINCL Input-source clamp voltage IIN=1 mA IIN=-1 mA 6 -1.0 6.8 8 -0.3 V IDSS Zero input voltage drain current (VIN=0 V) VDS=13 V; VIN=0 V; Tj=25 °C VDS=25 V; VIN=0 V 30 75 µA On (-40 °C<Tj<150 °C, unless otherwise specified) RDS(on) Static drain-source on resistance VIN=5 V; ID=0.5 A; Tj=25 °C VIN=5 V; ID=0.5 A 250 500 m Ω Dynamic (Tj=25 °C, unless otherwise specified) gfs (1) Forward transconductance VDD=13 V; ID=0.5 A 2 S COSS Output capacitance VDS=13 V; f=1 MHz; VIN=0 V 90 pF Switching (Tj=25 °C, unless otherwise specified) td(on) Turn-on delay time VDD=15 V; ID=0.5 A Vgen=5 V; Rgen=RIN MIN=330 Ω (see Figure 4) 70 200 ns tr Rise time 170 500 ns td(off) Turn-off delay time 350 1000 ns tf Fall time 200 600 ns |
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