UPA2816T1S datasheet(1/7 Pages) RENESAS

Part #	UPA2816T1S

Description	P-channel MOSFET ??0 V, ??7 A, 15.5 m廓

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Manufacturer	RENESAS [Renesas Technology Corp]

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R07DS0778EJ0101 Rev.1.01

Page 1 of 6

May 28, 2013

Data Sheet

μPA2816T1S

P-channel MOSFET

–30 V, –17 A, 15.5 m

Ω

Description

The

μPA2816T1S is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management

applications of portable equipment.

Features

• V

DSS = −30 V (TA = 25°C)

• Low on-state resistance

⎯ R

DS(on) = 15.5 mΩ MAX. (VGS = −10 V, ID = −17 A)

• 4.5 V Gate-drive available

• Small & thin type surface mount package with heat spreader

• Pb-free and Halogen free

Ordering Information

Part No.

LEAD PLATING

PACKING

Package

μPA2816T1S-E2-AT ∗1

Pure Sn

Tape 5000 p/reel

HWSON-8

typ. 0.022 g

Note:

∗1. Pb-free (This product does not contain Pb in external electrode and other parts.)

Absolute Maximum Ratings (TA = 25°C)

Item

Symbol

Ratings

Unit

Drain to Source Voltage (VGS = 0 V)

VDSS

−30

V

Gate to Source Voltage (VDS = 0 V)

VGSS

−25 / +20

V

Drain Current (DC) (TC = 25°C)

ID(DC)

m17

A

Drain Current (pulse)

∗1

ID(pulse)

m68

A

Total Power Dissipation

∗2

PT1

1.5

W

Total Power Dissipation (PW = 10 sec)

∗2

PT2

3.8

W

Total Power Dissipation (TC = 25°C)

PT3

12

W

Channel Temperature

Tch

150

°C

Storage Temperature

Tstg

−55 to +150

°C

Single Avalanche Current

∗3

IAS

17

A

Single Avalanche Energy

∗3

EAS

28.9

mJ

Thermal Resistance

Channel to Ambient Thermal Resistance

∗2

Rth(ch-A)

83.3

°C/W

Channel to Case (Drain) Thermal Resistance

Rth(ch-C)

10.4

°C/W

Notes:

∗1. PW ≤ 10 μs, Duty Cycle ≤ 1%

∗2. Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt

∗3. Starting T

ch = 25°C, VDD = −15 V, RG = 25 Ω, VGS = −20 → 0 V, L = 100 μH

R07DS0778EJ0101

Rev.1.01

May 28, 2013

HWSON-8

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