FQPF13N50 datasheet(3/10 Pages) FAIRCHILD

Part #	FQPF13N50

Description	500V N-Channel MOSFET

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

Direct Link	http://www.fairchildsemi.com

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3 / 10 page

Rev. B, September 2002

0

5

10

15

20

25

30

35

40

45

50

0

2

4

6

8

10

12

V

DS = 250V

V

DS = 100V

V

DS = 400V

※ Note : I

D = 13.4 A

Q

G, Total Gate Charge [nC]

10

-1

10

0

10

1

0

500

1000

1500

2000

2500

3000

3500

C

iss = Cgs + Cgd (Cds = shorted)

C

oss = Cds + Cgd

C

rss = Cgd

※ Notes :

1. V

GS = 0 V

2. f = 1 MHz

C

rss

C

oss

C

iss

V

DS, Drain-Source Voltage [V]

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

10

-1

10

0

10

1

25℃

150℃

※ Notes:

1. V

GS

= 0V

2. 250μ s Pulse Test

V

SD , Source-Drain Voltage [V]

0

10

203040

50

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

V

GS = 20V

V

GS = 10V

※ Note : T

J = 25

℃

I

D, Drain Current [A]

24

68

10

-1

10

0

10

1

※ Notes :

1. V

DS

= 50V

2. 250μ s Pulse Test

-55℃

150℃

25℃

V

GS , Gate-Source Voltage [V]

10

-1

10

0

10

1

10

0

10

1

※ Notes :

1. 250μ s Pulse Test

2. T

C = 25

℃

V

GS

Top :

15 V

10 V

8.0 V

7.0 V

6.5 V

6.0 V

Bottom :

5.5 V

V

DS , Drain-Source Voltage [V]

Typical Characteristics

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

Figure 2. Transfer Characteristics

Figure 1. On-Region Characteristics

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