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RJH60A83RDPD-A0 Datasheet(PDF) 4 Page - Renesas Technology Corp

Part # RJH60A83RDPD-A0
Description  600V - 10A - IGBT Application: Inverter
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RJH60A83RDPD-A0 Datasheet(HTML) 4 Page - Renesas Technology Corp

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RJH60A83RDPD-A0
Preliminary
R07DS1093EJ0100 Rev.1.00
Page 4 of 8
Jul 04, 2013
10
8
6
4
2
0
40
30
20
10
0
Typical Transfer Characteristics
0
4
8
12
16
20
VCE = 10 V
Pulse Test
Gate to Emitter Voltage VGE (V)
25°C
Tc = 150
°C
Collector to Emitter Saturation Voltage
vs. Junction Temparature (Typical)
−25
0
25
75
125
50
100
150
Case Temparature Tc (°C)
10 A
5 A
IC = 20 A
1
4
2
5
3
VGE = 15 V
Pulse Test
1
3
2
4
6
5
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
Gate to Emitter Voltage VGE (V)
810
12
18
16
14
20
3
2
4
6
5
IC = 20 A
10 A
IC = 20 A
10 A
Tc = 25°C
Pulse Test
1
810
12
18
16
14
20
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
Gate to Emitter Voltage VGE (V)
Tc = 150°C
Pulse Test
Gate to Emitter Cutoff Voltage
vs. Junction Temparature (Typical)
−25
0
25
75
125
50
100
150
VCE = 10 V
Pulse Test
Case Temparature Tc (°C)
1 mA
IC = 10 mA
Frequency Characteristics (Typical)
Frequency f (kHz)
6
5
4
3
2
1
0
1
100
10
1000
Tj = 125°C, Tc = 90°C
VCE = 300 V, VGE = 15 V
Rg = 5
Ω, duty = 50%
0
Collector current wave
(Square wave)


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