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BQ24253RGET Datasheet(PDF) 7 Page - Texas Instruments |
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BQ24253RGET Datasheet(HTML) 7 Page - Texas Instruments |
7 / 49 page ILIM LIM ILIM K I R = bq24250 bq24251 bq24253 www.ti.com SLUSBA1C – OCTOBER 2012 – REVISED JUNE 2013 ELECTRICAL CHARACTERISTICS (continued) VUVLO < VIN < VOVP and VIN > VBAT+VSLP, TJ = 0ºC-125°C and TJ = 25°C for typical values (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT INPUT PROTECTION IIN_LIMIT = 100 mA 90 95 100 mA IIN_LIMIT = 150 mA 135 142.5 150 IIN_LIMIT = 500 mA 450 475 500 IIN_LIMIT = 900 mA 810 860 910 IIN Input current limiting IIN_LIMIT = 1500 mA 1400 1475 1550 IIN_LIMIT = 2000 mA 1850 1950 2050 IIN_LIMIT = External Maximum input current limit ILIM programmable range for IN 500 2000 mA input Maximum input current factor KILIM ILIM = 500 mA to 2.0 A 240 270 300 A Ω for IN input Maximum ILIM pin voltage (in VILIM 0.42 V regulation) Short circuit resistance RILIM-SHORT 65 83 105 Ω threshold SA mode 4.2 10 VIN_DPM threshold range I2C mode 4.2 4.76 USB100, USB150, USB500, USB900, VIN_DPM threshold for USB current limit selected. Also I2C register 4.27 4.36 4.45 V Input in SA mode VIN_DPM default. VIN_DPM threshold with adaptor Must set to external resistor settings VIN_DPM VIN_DPM current limit and VDPM via the EN1/EN2 pins or the I2C . VIN_DPM . shorted to GND register interface. –2% +2% VIN_DPM threshold Accuracy Both I2C and SA mode –2 2 % VREF_DPM DPM regulation voltage External resistor setting only 1.15 1.2 1.25 V If VDPM is shorted to ground, VIN_DPM VDPM_SHRT VIN_DPM short threshold 0.3 V threshold will use internal default value IC active threshold voltage VIN rising 3.15 3.35 3.5 V VUVLO IC active hysteresis VIN falling from above VUVLO 175 mV Sleep-mode entry threshold, 2.0 V ≤ VBAT ≤ VBATREG, VIN falling 0 50 100 mV VIN-VBAT VSLP Sleep-mode exit hysteresis, 2.0 V ≤ VBAT ≤ VBATREG 40 100 160 mV VIN-VBAT Deglitch time for IN rising Rising voltage, 2-mV over drive, tRISE = tDGL(SLP) 32 ms above VIN+VSLP_EXIT 100 ns Input supply OVP threshold Input OVP Input OVP IN rising Input OVP V voltage –200mV +200mV VOVP VOVP hysteresis IN falling from VOVP 100 mV Deglitch time for IN Rising tDGL(OVP) IN rising voltage, tRISE = 100 ns 32 ms above VOVP VBAT threshold over VBATREG to turn off % Battery OVP threshold voltage 102.5 105 107.5 charger during charge VBATREG VBOVP Lower limit for VBAT falling from above % VBOVP hysteresis 1 VBOVP VBATREG tDGL(BOVP) BOVP Deglitch Battery entering/exiting BOVP 1 ms Copyright © 2012–2013, Texas Instruments Incorporated Submit Documentation Feedback 7 Product Folder Links: bq24250 bq24251 bq24253 |
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