HITFET - BTS3800SL

Smart low side power switch

General Product Characteristics

Datasheet

7

Rev. 1.1, 2011-04-30

4

General Product Characteristics

4.1

Absolute Maximum Ratings

Note: Stresses above the ones listed here may cause permanent damage to the device.

Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

Note: Integrated protection functions are designed to prevent IC destruction under fault conditions described in the

data sheet. Fault conditions are considered as “outside” normal operating range.

Protection functions are not designed for continuous repetitive operation.

T

(unless otherwise specified)

1) Not subject to production test, specified by design.

Pos.

Parameter

Symbol Limit Values Unit

Test Conditions

Min.

Max.

Voltages

4.1.1

Drain voltage

V

DS

–41

V

2)

2) Active clamped.

4.1.2

Drain voltage for short circuit protection

V

DS(SC)

–36

V

4.1.3

Input Voltage

V

IN

-0.3

5.5

V

–

4.1.4

Input Current

I

IN

self limited

-0.3 V <

V

-4

4

mA

5.5 V <

V

4.1.5

Maximum Drain Current

I

D

–0.75

A

3)

3) Current protection threshold see “Over Load Protection” on Page 13 for details.

Energies

4.1.6

Unclamped single pulse inductive energy

E

AS

–65

mJ

I

T

4.1.7

Unclamped repetitive pulse inductive

energy 1

E

AR

–14

mJ

I

V

T

4.1.8

Unclamped repetitive pulse inductive

energy 1

–12

mJ

I

V

T

Temperatures

4.1.9

Operating temperature

T

J

-40

+150

°C–

4.1.10

Storage temperature

T

STG

-55

+150

°C–

ESD Susceptibility

4.1.11

ESD Resistivity

kV

4) ESD susceptibility, HBM according to EIA/JESD 22-A114.

All pins

-4

4

Drain vs. Source

-8

8