NXP Semiconductors

Product specification

Thyristors

BT258S-800R

logic level

Fig.7. Normalised gate trigger current

I

Fig.8. Normalised latching current I

versus junction temperature T

Fig.9. Normalised holding current I

versus junction temperature T

Fig.10. Typical and maximum on-state characteristic.

Fig.11. Transient thermal impedance Z

pulse width t

Fig.12. Typical, critical rate of rise of off-state voltage,

dV

-50

0

50

100

150

0

0.5

1

1.5

2

2.5

3

Tj / C

IGT(Tj)

IGT(25 C)

0

0.5

1

1.5

2

0

10

20

30

typ

VT / V

IT / A

max

Vo = 1 V

Rs = 0.04 Ω

Tj = 125 °C

Tj = 25 °C

-50

0

50

100

150

0

0.5

1

1.5

2

2.5

3

BT150

Tj / C

IL(Tj)

IL(25 C)

10us

0.1ms

1ms

10ms

0.1s

1s

10s

0.01

0.1

1

10

tp / s

Zth j-mb (K/W)

t

p

P

t

D

-50

0

50

100

150

0

0.5

1

1.5

2

2.5

3

Tj / C

IH(Tj)

IH(25 C)

0

50

100

150

1

10

100

1000

Tj / C

dVD/dt (V/us)

RGK = 100 ohms

October 2002

4

Rev 2.000