FQU18N20V2 datasheet(4/9 Pages) FAIRCHILD

Part #	FQU18N20V2

Description	200V N-Channel MOSFET

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

Direct Link	http://www.fairchildsemi.com

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4 / 9 page

Rev. B1, August 2002

10

-5

10

-4

10

-3

10

-2

10

-1

10

0

10

1

10

-2

10

-1

10

0

※

No t e s :

1 . Z

θ

JC ( t )

= 1. 5 ℃ /W

M a x .

2 . D u ty F a c t o r , D = t

1

/t

2

3 . T

JM

- T

C

= P

DM

* Z

θ

JC

(t )

s i ng l e pu l s e

D= 0 . 5

0. 0 2

0. 2

0. 0 5

0. 1

0. 0 1

t

1 ,

S quar e W a v e P u l s e D u r a t i on [ s ec ]

25

50

75

100

125

150

0

5

10

15

20

T

C, Case Temperature [

℃]

10

0

10

1

10

2

10

-1

10

0

10

1

10

2

DC

10 ms

1 ms

100 us

Operation in This Area

is Limited by R

DS(on)

※ Notes :

1. T

C = 25

oC

2. T

J = 150

oC

3. Single Pulse

V

DS, Drain-Source Voltage [V]

Typical Characteristics

(Continued)

Figure 11. Transient Thermal Response Curve

t1

PDM

t2

-100

-50

0

50

100

150

200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

※ Notes :

1. V

GS

= 10 V

2. I

D = 7.5 A

T

J, Junction Temperature [

o

C]

-100

-50

0

50

100

150

200

0.8

0.9

1.0

1.1

1.2

※ Notes :

1. V

GS = 0 V

2. I

D = 250

μ A

T

J, Junction Temperature [

o

C]

Figure 9. Maximum Safe Operating Area

Figure 7. Breakdown Voltage Variation

vs. Temperature

Figure 8. On-Resistance Variation

vs. Temperature

Figure 10. Maximum Drain Current

vs. Case Temperature

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