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HN2D02FUTW1T1G Datasheet(PDF) 2 Page - ON Semiconductor

Part # HN2D02FUTW1T1G
Description  Ultra High Speed Switching Diodes
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

HN2D02FUTW1T1G Datasheet(HTML) 2 Page - ON Semiconductor

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HN2D02FUTW1T1
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ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic
Symbol
Condition
Min
Max
Unit
Reverse Voltage Leakage Current
IR
VR = 35 V
—
0.1
mAdc
VR = 75 V
—
0.1
Forward Voltage
VF
IF = 100 mA
—
1.2
Vdc
Reverse Breakdown Voltage
VR
IR = 100 mA
80
—
Vdc
Diode Capacitance
CD
VR = 0, f = 1.0 MHz
—
2.0
pF
Reverse Recovery Time (Figure 1)
trr (Note 3)
IF = 10 mA, VR = 6.0 V,
RL = 100 W, Irr = 0.1 IR
—
3.0
ns
3. trr Test Circuit
A
RL
tr
tp
t
10%
90%
VR
tp = 2 ms
tr = 0.35 ns
IF
trr
t
Irr = 0.1 IR
IF = 10 mA
VR = 6 V
RL = 100 W
RECOVERY TIME EQUIVALENT TEST CIRCUIT
INPUT PULSE
OUTPUT PULSE
Figure 1. Reverse Recovery Time Equivalent Test Circuit


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