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HN2D02FUTW1T1G Datasheet(PDF) 2 Page - ON Semiconductor |
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HN2D02FUTW1T1G Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 4 page HN2D02FUTW1T1 http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristic Symbol Condition Min Max Unit Reverse Voltage Leakage Current IR VR = 35 V — 0.1 mAdc VR = 75 V — 0.1 Forward Voltage VF IF = 100 mA — 1.2 Vdc Reverse Breakdown Voltage VR IR = 100 mA 80 — Vdc Diode Capacitance CD VR = 0, f = 1.0 MHz — 2.0 pF Reverse Recovery Time (Figure 1) trr (Note 3) IF = 10 mA, VR = 6.0 V, RL = 100 W, Irr = 0.1 IR — 3.0 ns 3. trr Test Circuit A RL tr tp t 10% 90% VR tp = 2 ms tr = 0.35 ns IF trr t Irr = 0.1 IR IF = 10 mA VR = 6 V RL = 100 W RECOVERY TIME EQUIVALENT TEST CIRCUIT INPUT PULSE OUTPUT PULSE Figure 1. Reverse Recovery Time Equivalent Test Circuit |
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