2N3019SJANTX datasheet(1/4 Pages) ONSEMI

Part #	2N3019SJANTX

Description	Low Power Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

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August, 2012 − Rev. 2

1

Publication Order Number:

2N3019/D

2N3019, 2N3019S, 2N3700

Low Power Transistors

NPN Silicon

Features

• MIL−PRF−19500/391Qualified

• Available as JAN, JANTX, and JANTXV

MAXIMUM RATINGS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Value

Unit

Collector−Emitter Voltage

VCEO

80

Vdc

Collector−Base Voltage

VCBO

140

Vdc

Emitter−Base Voltage

VEBO

7.0

Vdc

Collector Current − Continuous

IC

1.0

Adc

Total Device Dissipation @ TA = 25°C

2N3019, 2N3019S

2N3700

PT

800

500

mW

Total Device Dissipation @ TC = 25°C

2N3019, 2N3019S

2N3700

PT

5.0

1.0

W

Operating and Storage Junction

Temperature Range

TJ, Tstg

−65 to

+200

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Ambient

2N3019, 2N3019S

2N3700

RqJA

195

325

°C/W

Thermal Resistance, Junction to Case

2N3019, 2N3019S

2N3700

RqJC

30

150

°C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

http://onsemi.com

COLLECTOR

3

2

BASE

1

EMITTER

TO−5

CASE 205AA

STYLE 1

2N3019

Device

Package

Shipping

ORDERING INFORMATION

JAN2N3019

JANTX2N3019

TO−5

Bulk

JANTXV2N3019

JAN2N3019S

JANTX2N3019S

TO−39

Bulk

JANTXV2N3019S

TO−39

CASE 205AB

STYLE 1

2N3019S

TO−18

CASE 206AA

STYLE 1

2N3700

JAN2N3700

JANTX2N3700

TO−18

Bulk

JANTXV2N3700

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