©2000 Fairchild Semiconductor International

September 2000

Rev. A, September 2000

FQB6N80 / FQI6N80

800V N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switch mode power supply.

Features

• Low gate charge ( typical 31 nC)

• Low Crss ( typical 14 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

Thermal Characteristics

Symbol

Parameter

FQB6N80 / FQI6N80

Units

Drain-Source Voltage

800

V

Drain Current

5.8

A

3.67

A

Drain Current

- Pulsed

(Note 1)

23.2

A

Gate-Source Voltage

± 30

V

Single Pulsed Avalanche Energy

(Note 2)

680

mJ

Avalanche Current

(Note 1)

5.8

A

Repetitive Avalanche Energy

(Note 1)

15.8

mJ

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

4.0

V/ns

3.13

W

158

W

- Derate above 25°C

1.27

W/°C

Operating and Storage Temperature Range

-55 to +150

°C

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

300

°C

Symbol

Parameter

Typ

Max

Units

Thermal Resistance, Junction-to-Case

--

0.79

°C/W

Thermal Resistance, Junction-to-Ambient *

--

40

°C/W

Thermal Resistance, Junction-to-Ambient

--

62.5

°C/W

* When mounted on the minimum pad size recommended (PCB Mount)

3 5

!

!

!

"

"

"

3 5

!

!

!

"

"

"

S

D

G

FQB Series

FQI Series

G

S

D

G

S

D