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VNQ5E050AK-E Datasheet(PDF) 10 Page - STMicroelectronics |
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VNQ5E050AK-E Datasheet(HTML) 10 Page - STMicroelectronics |
10 / 37 page Electrical specifications VNQ5E050AK-E 10/37 Doc ID 13519 Rev 6 ICSDH High level CS_DIS current VCSD =2.1 V 10 µA VCSD(hyst) CS_DIS hysteresis voltage 0.25 V VCSCL CS_DIS clamp voltage ICSD =1mA 5.5 7 V ICSD =-1mA -0.7 Table 8. Protections and diagnostics (1) 1. To ensure long term reliability under heavy overload or short circuit conditions, protection and related diagnostic signals must be used together with a proper software strategy. If the device is subjected to abnormal conditions, this software must limit the duration and number of activation cycles. Symbol Parameter Test conditions Min. Typ. Max. Unit IlimH DC short circuit current VCC = 13 V 19 27 38 A 5V<VCC <28V 38 A IlimL Short circuit current during thermal cycling VCC =13V; TR <Tj <TTSD 7A TTSD Shutdown temperature 150 175 200 °C TR Reset temperature TRS + 1 TRS + 5 °C TRS Thermal reset of STATUS 135 °C THYST Thermal hysteresis (TTSD-TR) 7°C VDEMAG Turn-off output voltage clamp IOUT =2A; VIN =0; L=6mH VCC-41 VCC-46 VCC-52 V VON Output voltage drop limitation IOUT =0.1 A; Tj = -40 °C...150 °C (see Figure 8) 25 mV Table 9. Current sense (8 V < VCC <18V) Symbol Parameter Test conditions Min. Typ. Max. Unit K0 IOUT/ISENSE IOUT =0.05A; VSENSE = 0.5 V; VCSD =0 V; Tj = -40 °C...150 °C 1050 2110 3170 K1 IOUT/ISENSE IOUT =1A; VSENSE =4V; VCSD =0V; Tj = -40 °C...150 °C Tj = 25 °C...150 °C 1510 1510 1890 1890 2650 2270 dK1/K1 (1) Current sense ratio drift IOUT =1A; VSENSE =4V; VCSD =0V; Tj = -40 °C to 150 °C -13 13 % Table 7. Logic inputs (continued) Symbol Parameter Test conditions Min. Typ. Max. Unit |
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