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T3050H-6I Datasheet(PDF) 2 Page - STMicroelectronics |
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T3050H-6I Datasheet(HTML) 2 Page - STMicroelectronics |
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2 / 9 page  Characteristics T3035H T3050H 2/9 Doc ID 17029 Rev 4 1 Characteristics Table 2. Absolute maximum rating Symbol Parameter Value Unit IT(RMS) On-state rms current (full sine wave) TO-220AB Tc = 121 °C 30 A TO-220AB insul. Tc = 92 °C ITSM Non repetitive surge peak on-state current (full cycle, Tj initial = 25 °C) F = 50 Hz t = 20 ms 270 A F = 60 Hz t = 16.7 ms 284 I²tI²t Value for fusing tp = 10 ms 487 A²s dI/dt Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns F = 120 Hz Tj = 150 °C 50 A/µs VDSM/ VRSM Non repetitive surge peak off-state volt-age tp = 10 µs Tj = 25 °C VDSM/VRSM +100 V IGM Peak gate current tp = 20 µs Tj = 150 °C 4 A PG(AV) Average gate power dissipation Tj = 150 °C 1 W Tstg Tj Storage junction temperature range Operating junction temperature range -40 to +150 -40 to +150 °C Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise specified) Symbol Test conditions Quadrant Value Unit T3035H T3050H IGT (1) 1. Minimum IGT is guaranted at 20 % of IGT max. VD = 12 V RL = 33 Ω I - II - III MAX. 35 50 mA VGT I - II - III MAX. 1.0 V VGD VD = VDRM RL = 3.3 kΩ I - II - III MIN. 0.15 V IH (2) 2. For both polarities of A2 referenced to A1. IT = 500 mA MAX. 60 75 mA IL IG = 1.2 IGT I - III MAX. 75 90 mA II 90 110 dV/dt (2) VD = 67 %VDRM gate open Tj = 150 °C MIN. 1000 1500 V/µs (dI/dt)c (2) Without snubber Tj = 150 °C MIN. 33 44 A/ms |
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