SI4230DY-T1-GE3 datasheet(1/10 Pages) VISHAY

Part #	SI4230DY-T1-GE3

Description	Dual N-Channel 30-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Vishay Siliconix

Si4230DY

Document Number: 68983

S-82660-Rev. A, 03-Nov-08

www.vishay.com

1

Dual N-Channel 30-V (D-S) MOSFET

FEATURES

•

Halogen-free

•TrenchFET® Power MOSFET

• 100 % Rg and UIS Tested

APPLICATIONS

•

Low Current DC/DC

•

Notebook PC

- System Power

Notes:

a. Based on TC = 25 °C.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. Maximum under Steady State conditions is 110 °C/W.

e. Package limited.

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)

ID (A)

a, e

Qg (Typ.)

30

0.0205 at VGS = 10 V

8

7.3

0.026 at VGS = 4.5 V

8

S1

D1

G1

D1

S2

D2

G2

D2

SO-8

5

6

7

8

Top View

2

3

4

1

Ordering Information: Si4230DY-T1-GE3 (Lead (Pb)-free and Halogen-free)

D1

G1

S1

N-Channel MOSFET

D2

G2

S2

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

8e

A

TC = 70 °C

7.5

TA = 25 °C

7.3b, c

TA = 70 °C

5.8b, c

Pulsed Drain Current (10 µs Pulse Width)

IDM

30

Source-Drain Current Diode Current

TC = 25 °C

IS

2.6

TA = 25 °C

1.7b, c

Pulsed Source-Drain Current

ISM

30

Single Pulse Avalanche Current

L = 0.1 mH

IAS

10

Single Pulse Avalanche Energy

EAS

5

mJ

Maximum Power Dissipation

TC = 25 °C

PD

3.2

W

TC = 70 °C

2.1

TA = 25 °C

2b, c

TA = 70 °C

1.28b, c

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambientb, d

t

≤ 10 s

RthJA

50

62.5

°C/W

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

30

38

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