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T830-8FP Datasheet(PDF) 3 Page - STMicroelectronics |
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T830-8FP Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 9 page T830-8FP Characteristics Doc ID 023366 Rev 1 3/9 Table 4. Static characteristics Symbol Test conditions Value Unit VT (1) ITM = 11 A, tp = 380 µs Tj = 25 °C Max. 1.55 V Vt0 (1) Threshold voltage Tj = 125 °C Max. 0.85 V Rd (1) Dynamic resistance Tj = 125 °C Max. 40 m IDRM IRRM VDRM = VRRM Tj = 25 °C Max. 5µA Tj = 125 °C 1 mA 1. For both polarities of A2 referenced to A1. Table 5. Thermal resistance Symbol Parameter Value Unit Rth(j-c) Junction to case (AC) 3.5 °C/W Rth(j-a) Junction to ambient 60 °C/W Figure 1. Maximum power dissipation versus rms on-state current Figure 2. On-state rms current versus case temperature P(W) 0 2 4 6 8 10 02468 α =180 ° I (A) T(RMS) 180° I (A) T(RMS) 0 2 4 6 8 10 0 25 50 75 100 125 α =180° T (°C) C Figure 3. On-state rms current versus ambient temperature (free air convection) Figure 4. Relative variation of thermal impedance versus pulse duration I (A) T(RMS) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 25 50 75 100 125 T (°C) a α = 180° K = [Zth / Rth] 1.0E-02 1.0E-01 1.0E+00 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03 1.0E+04 1.0E+05 tp (s) Z th(j-a) Z th(j-c) |
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