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T830-8FP Datasheet(PDF) 2 Page - STMicroelectronics |
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T830-8FP Datasheet(HTML) 2 Page - STMicroelectronics |
2 / 9 page Characteristics T830-8FP 2/9 Doc ID 023366 Rev 1 1 Characteristics Table 2. Absolute ratings (limiting values) Symbol Parameter Value Unit IT(rms) On-state rms current (full sine wave) Tc = 95 °C 8 A ITSM Non repetitive surge peak on-state current (full cycle, Tj initial = 25 °C) F = 50 Hz t = 20 ms 80 A F = 60 Hz t = 16.7 ms 84 I²tI²t Value for fusing tp = 10 ms 42 A²s dI/dt Critical rate of rise of on-state current IG = 2 x IGT, tr 100 ns F = 120 Hz Tj = 125 °C 100 A/µs VDSM, VRSM Non repetitive surge peak on-state voltage tp = 10 ms Tj = 25 °C 900 V IGM Peak gate current tp = 20 µs Tj = 125 °C 4 A PG(AV) Average gate power dissipation Tj = 125 °C 1 W Tstg Tj Storage junction temperature range Operating junction temperature range - 40 to + 150 - 40 to + 125 °C TL Lead temperature for soldering during 10 s (at 4 mm from case) 260 °C Vins Insulation rms voltage, 1 minute 1500 V Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise specified) Symbol Test conditions Quadrant Value Unit IGT (1) 1. Minimum IGT is guaranteed at 5% of IGT max. VD = 12 V, RL = 30 I - II - III Max. 30 mA VGT 1.3 V VGD VD = VDRM, RL = 3.3 kTj = 125 °C I - II - III Min. 0.2 V IH (2) 2. For both polarities of A2 referenced to A1. IT = 250 mA Max. 50 mA IL IG = 1.2 IGT I - II - III Max. 60 mA dV/dt VD = 67%VDRM, gate open Tj = 125 °C Min. 2500 V/µs (dI/dt)c Without snubber Tj = 125 °C Min. 10.0 A/ms |
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