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LSM303DLHC Datasheet(PDF) 10 Page - STMicroelectronics |
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LSM303DLHC Datasheet(HTML) 10 Page - STMicroelectronics |
10 / 42 page Module specifications LSM303DLHC 10/42 Doc ID 018771 Rev 1 2.2 Temperature sensor characteristics @ Vdd = 2.5 V, T = 25 °C unless otherwise noted (b). LA_TCSo Linear acceleration sensitivity change vs. temperature FS bit set to 00 ±0.01 %/°C LA_TyOff Linear acceleration typical Zero- g level offset accuracy(3),(4) FS bit set to 00 ±60 m g LA_TCOff Linear acceleration Zero- g level change vs. temperature Max. delta from 25 °C ±0.5 m g/°C LA_An Acceleration noise density FS bit set to 00, normal mode( Table 8.), ODR bit set to 1001 220 ug/ sqrt(Hz) M_R Magnetic resolution 2 mgauss M_CAS Magnetic cross-axis sensitivity Cross field =.0.5 gauss H applied = ±3 gauss ±1 %FS/ gauss M_EF Maximum exposed field No permitting effect on zero reading 10000 gauss M_DF Disturbing field Sensitivity starts to degrade. Use S/R pulse to restore sensitivity 20 gauss Top Operating temperature range -40 +85 °C 1. Typical specifications are not guaranteed. 2. Verified by wafer level test and measurement of initial offset and sensitivity. 3. Typical Zero-g level offset value after MSL3 preconditioning. 4. Offset can be eliminated by enabling the built-in high pass filter. Table 3. Sensor characteristics (continued) Symbol Parameter Test conditions Min. Typ.(1) Max. Unit b. The product is factory calibrated at 2.5 V. Table 4. Temperature sensor characteristics Symbol Parameter Test condition Min. Typ.(1) Max. Unit TSDr Temperature sensor output change vs. temperature - 8LSB/°C(2) TODR Temperature refresh rate ODR(3) Hz Top Operating temperature range -40 +85 °C 1. Typical specifications are not guaranteed. 2. 12-bit resolution. 3. For ODR configuration refer to Table 72. |
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