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IPP65R190E6 Datasheet(PDF) 2 Page - Infineon Technologies AG |
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IPP65R190E6 Datasheet(HTML) 2 Page - Infineon Technologies AG |
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2 / 19 page  drain pin 2 gate pin 1 source pin 3 650V CoolMOS™ E6 Power Transistor IPA65R190E6, IPB65R190E6 IPI65R190E6, IPP65R190E6 IPW65R190E6 Final Data Sheet 2 Rev. 2.0, 2011-05-13 1 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ E6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler. Features • Extremely low losses due to very low FOM Rdson*Qg and Eoss • Very high commutation ruggedness • Easy to use/drive • JEDEC 1) qualified, Pb-free plating, Halogen free Applications PFC stages, hard switching PWM stages and resonant switching PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server, Telecom and UPS. Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended. 1) J-STD20 and JESD22 Table 1 Key Performance Parameters Parameter Value Unit V DS @ Tj,max 700 V R DS(on),max 0.19 Q g,typ 73 nC I D,pulse 66 A E oss @ 400V 5.9 µJ Body diode d i/dt 500 A/µs Type / Ordering Code Package Marking Related Links IPW65R190E6 PG-TO247 IFX CoolMOS Webpage IPB65R190E6 PG-TO263 IFX Design tools IPI65R190E6 PG-TO262 65E6190 IPP65R190E6 PG-TO220 IPA65R190E6 PG-TO220 FullPAK |
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