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MAC212A8G Datasheet(PDF) 1 Page - ON Semiconductor |
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MAC212A8G Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 6 page © Semiconductor Components Industries, LLC, 2005 December, 2005 − Rev. 2 1 Publication Order Number: MAC212A8/D MAC212A8, MAC212A10 Preferred Device Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering. Features • Blocking Voltage to 800 Volts • All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability • Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability • Gate Triggering Guaranteed in Four Modes • Pb−Free Packages are Available* MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Off−State Voltage (Note 1) (TJ = −40 to +125°C, Sine Wave 50 to 60 Hz, Gate Open) MAC212A8 MAC212A10 VDRM, VRRM 600 800 V On-State RMS Current (TC = +85°C) Full Cycle Sine Wave 50 to 60 Hz IT(RMS) 12 A Peak Non−repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, TC = +25°C) Preceded and followed by rated current ITSM 100 A Circuit Fusing Considerations (t = 8.3 ms) I2t 40 A2s Peak Gate Power (TC = +85°C, Pulse Width = 10 ms) PGM 20 W Average Gate Power (TC = +85°C, t = 8.3 ms) PG(AV) 0.35 W Peak Gate Current (TC = +85°C, Pulse Width = 10 ms) IGM 2.0 A Operating Junction Temperature Range TJ −40 to +125 °C Storage Temperature Range Tstg −40 to +150 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. TRIACS 12 AMPERES RMS 600 thru 800 VOLTS PIN ASSIGNMENT 1 2 3 Gate Main Terminal 1 Main Terminal 2 4 Main Terminal 2 MT1 G MT2 Preferred devices are recommended choices for future use and best overall value. http://onsemi.com TO−220AB CASE 221A−07 STYLE 4 1 MAC212AxG AYWW MARKING DIAGRAM x = 8 or 10 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package 2 3 Device Package Shipping ORDERING INFORMATION MAC212A8D TO−220AB 500 Units / Box MAC212A8DG TO−220AB (Pb−Free) 500 Units / Box MAC212A10 TO−220AB 500 Units / Box MAC212A10G TO−220AB (Pb−Free) 500 Units / Box |
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