MAC212A8G datasheet(1/6 Pages) ONSEMI

Part #	MAC212A8G

Description	Silicon Bidirectional Thyristors

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Manufacturer	ONSEMI [ON Semiconductor]

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December, 2005 − Rev. 2

1

Publication Order Number:

MAC212A8/D

MAC212A8, MAC212A10

Preferred Device

Triacs

Silicon Bidirectional Thyristors

Designed primarily for full-wave ac control applications, such as

light dimmers, motor controls, heating controls and power supplies; or

wherever full-wave silicon gate controlled solid-state devices are

needed. Triac type thyristors switch from a blocking to a conducting

state for either polarity of applied anode voltage with positive or

negative gate triggering.

Features

• Blocking Voltage to 800 Volts

• All Diffused and Glass Passivated Junctions for Greater Parameter

Uniformity and Stability

• Small, Rugged, Thermowatt Construction for Low Thermal

Resistance, High Heat Dissipation and Durability

• Gate Triggering Guaranteed in Four Modes

• Pb−Free Packages are Available*

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Peak Repetitive Off−State Voltage (Note 1)

(TJ = −40 to +125°C, Sine Wave 50 to 60 Hz,

Gate Open)

MAC212A8

MAC212A10

VDRM,

VRRM

600

800

V

On-State RMS Current (TC = +85°C)

Full Cycle Sine Wave 50 to 60 Hz

IT(RMS)

12

A

Peak Non−repetitive Surge Current (One

Full Cycle Sine Wave, 60 Hz, TC = +25°C)

Preceded and followed by rated current

ITSM

100

A

Circuit Fusing Considerations (t = 8.3 ms)

I2t

40

A2s

Peak Gate Power

(TC = +85°C, Pulse Width = 10 ms)

PGM

20

W

Average Gate Power

(TC = +85°C, t = 8.3 ms)

PG(AV)

0.35

W

Peak Gate Current

(TC = +85°C, Pulse Width = 10 ms)

IGM

2.0

A

Operating Junction Temperature Range

TJ

−40 to +125

°C

Storage Temperature Range

Tstg

−40 to +150

°C

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking

voltages shall not be tested with a constant current source such that the

voltage ratings of the devices are exceeded.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

TRIACS

12 AMPERES RMS

600 thru 800 VOLTS

PIN ASSIGNMENT

1

2

3

Gate

Main Terminal 1

Main Terminal 2

4

Main Terminal 2

MT1

G

MT2

Preferred devices are recommended choices for future use

and best overall value.

http://onsemi.com

TO−220AB

CASE 221A−07

STYLE 4

1

MAC212AxG

AYWW

MARKING

DIAGRAM

x

= 8 or 10

A

= Assembly Location

Y

= Year

WW

= Work Week

G

= Pb−Free Package

2

3

Device

Package

Shipping

ORDERING INFORMATION

MAC212A8D

TO−220AB

500 Units / Box

MAC212A8DG

TO−220AB

(Pb−Free)

500 Units / Box

MAC212A10

TO−220AB

500 Units / Box

MAC212A10G

TO−220AB

(Pb−Free)

500 Units / Box

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