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T810T-6I Datasheet(PDF) 2 Page - STMicroelectronics |
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T810T-6I Datasheet(HTML) 2 Page - STMicroelectronics |
2 / 9 page Characteristics T8T 2/9 Doc ID 16192 Rev 3 1 Characteristics Table 2. Absolute ratings (limiting values; Tj = 25 °C, unless otherwise specified) Symbol Parameter Value Unit IT(RMS) On-state rms current (full sine wave) Tc = 97 °C 8 A ITSM Non repetitive surge peak on-state current (full cycle, Tj initial = 25 °C) F = 50 Hz tp = 20 ms 60 A F = 60 Hz tp = 16.7 ms 63 I²tI²t Value for fusing tp = 10 ms 26 A²s dI/dt Critical rate of rise of on-state current IG = 2 x IGT tr ≤ 100 ns F = 60 Hz Tj = 125 °C 50 A/µs VDSM / VRSM Non repetitive surge peak off-state voltage tp = 10 ms Tj = 25 °C VDRM/VRRM + 100 V IGM Peak gate current tp = 20 µs Tj = 125 °C 4 A PG(AV) Average gate power dissipation Tj = 125 °C 1 W Tstg Storage junction temperature range - 40 to + 150 °C Tj Operating junction temperature range - 40 to + 125 °C |
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