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CY7C1363D-133AXI Datasheet(PDF) 6 Page - Cypress Semiconductor

Part # CY7C1363D-133AXI
Description  9-Mbit (512 K x 18) Flow-Through SRAM
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Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CY7C1363D-133AXI Datasheet(HTML) 6 Page - Cypress Semiconductor

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CY7C1363D
Document Number: 001-86215 Rev. **
Page 6 of 22
Functional Overview
All synchronous inputs pass through input registers controlled by
the rising edge of the clock. Maximum access delay from the
clock rise (tCDV) is 6.5 ns (133 MHz device).
The CY7C1363D supports secondary cache in systems using
either a linear or interleaved burst sequence. The interleaved
burst order supports Pentium and i486™ processors. The linear
burst sequence is suited for processors that use a linear burst
sequence. The burst order is user-selectable, and is determined
by sampling the MODE input. Accesses can be initiated with
either the processor address strobe (ADSP) or the controller
address strobe (ADSC). Address advancement through the
burst sequence is controlled by the ADV input. A two-bit on-chip
wraparound burst counter captures the first address in a burst
sequence and automatically increments the address for the rest
of the burst access.
Byte write operations are qualified with the byte write enable
(BWE) and byte write select (BWX) inputs. A global write enable
(GW) overrides all byte write inputs and writes data to all four
bytes. All writes are simplified with on-chip synchronous
self-timed write circuitry.
Three synchronous chip selects (CE1, CE2, CE3[3]) and an
asynchronous output enable (OE) provide for easy bank
selection and output tristate control. ADSP is ignored if CE1 is
HIGH.
Single Read Accesses
A single read access is initiated when the following conditions
are satisfied at clock rise: (1) CE1, CE2, and CE3[3] are all
asserted active and (2) ADSP or ADSC is asserted LOW (if the
access is initiated by ADSC, the write inputs must be deasserted
during this first cycle). The address presented to the address
inputs is latched into the address register and the burst
counter/control logic and presented to the memory core. If the
OE input is asserted LOW, the requested data will be available
at the data outputs a maximum to tCDV after clock rise. ADSP is
ignored if CE1 is HIGH.
Single Write Accesses Initiated by ADSP
This access is initiated when the following conditions are
satisfied at clock rise: (1) CE1, CE2, CE3[3] are all asserted active
and (2) ADSP is asserted LOW. The addresses presented are
loaded into the address register and the burst inputs (GW, BWE,
and BWX) are ignored during this first clock cycle. If the write
inputs are asserted active (see Partial Truth Table for Read/Write
on page 11 for appropriate states that indicate a write) on the
next clock rise, the appropriate data will be latched and written
into the device.Byte writes are allowed. All I/Os are tristated
during a byte write. Since this is a common I/O device, the
asynchronous OE input signal must be deasserted and the I/Os
must be tristated prior to the presentation of data to DQs. As a
safety precaution, the data lines are tristated once a write cycle
is detected, regardless of the state of OE.
VDDQ
I/O power
supply
Power supply for the I/O circuitry.
VSS
Ground
Ground for the core of the device.
VSSQ
I/O ground
Ground for the I/O circuitry.
NC
No connects. Not internally connected to the die. 18M, 36M, 72M, 144M, 288M, 576M, and 1G are
address expansion pins and are not internally connected to the die.
VSS/DNU
Ground/DNU This pin can be connected to ground or should be left floating.
Pin Definitions (continued)
Name
I/O
Description
Note
3. CE3 is for A version of 100-pin TQFP (3 Chip Enable Option).


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