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CY7C131E Datasheet(PDF) 8 Page - Cypress Semiconductor

Part # CY7C131E
Description  1 K / 2 K x 8 Dual-port Static RAM
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Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CY7C131E Datasheet(HTML) 8 Page - Cypress Semiconductor

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CY7C131E, CY7C131AE
CY7C136E, CY7C136AE
Document Number: 001-64231 Rev. *E
Page 8 of 20
Switching Characteristics
Over the Operating Range
Parameter
Description
7C131E-55
7C136E-55
7C136AE-55
Unit
Min
Max
Read Cycle
tRC
Read cycle time
55
ns
tAA
Address to data valid [21]
–55
ns
tOHA
Data hold from Address change
3
ns
tACE
CE LOW to data valid [21]
–55
ns
tDOE
OE LOW to data valid [21]
–25
ns
tLZOE
OE LOW to Low Z [21, 22, 23]
3–
ns
tHZOE
OE HIGH to High Z [21, 22, 23]
–25
ns
tLZCE
CE LOW to Low Z [21, 22, 23]
5–
ns
tHZCE
CE HIGH to High Z [21, 22, 23]
–25
ns
tPU
CE LOW to power-up [22]
0–
ns
tPD
CE HIGH to power-down [22]
–35
ns
Write Cycle
tWC
Write cycle time
55
ns
tSCE
CE LOW to write end
40
ns
tAW
Address setup to write end
40
ns
tHA
Address hold from write end
2
ns
tSA
Address setup to write start
0
ns
tPWE
R/W pulse width
30
ns
tSD
Data setup to write end
20
ns
tHD
Data hold from write end
0
ns
tHZWE
R/W LOW to High Z [24]
–25
ns
tLZWE
R/W HIGH to Low Z [24]
3–
ns
Busy/Interrupt Timing[20]
tBLA
BUSY LOW from Address match
30
ns
tBHA
BUSY HIGH from Address mismatch [25]
–30
ns
tBLC
BUSY LOW from CE LOW
30
ns
tBHC
BUSY HIGH from CE HIGH [25]
–30
ns
tPS
Port setup for priority
5
ns
tBDD
BUSY HIGH to valid data
45
ns
Notes
20. Test conditions used are Load 2.
21. The internal write time of the memory is defined by the overlap of CE LOW and R/W LOW. Both signals must be low to initiate a write and either signal can terminate
a write by going high. The data input setup and hold timing should be referenced to the rising edge of the signal that terminates the write.
22. AC Test Conditions use VOH = 1.6 V and VOL = 1.4 V.
23. These parameters are measured from the input signal changing, until the output pin goes to a high impedance state.
24. Parameters tLZCE, tLZWE, tHZOE, tLZOE, tHZCE and tHZWE are tested with C = 5 pF as in part (b) of Figure 3 on page 5. Transition is measured ±500 mV from steady
state voltage.
25. A write operation on Port A, where Port A has priority, leaves the data on Port B’s outputs undisturbed until one access time after one of the following:
BUSY on Port B goes HIGH.
Port B’s address toggled.
CE for Port B is toggled.
R/W for Port B is toggled during valid read.


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