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PA10SD Datasheet(PDF) 1 Page - First Components International |
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PA10SD Datasheet(HTML) 1 Page - First Components International |
1 / 2 page MAXIMUMRATINGSANDELECTRICALCHARACTERISTICS(Ta=25℃) PARAMETERS SYMBOL V UNITS Repetitive Peak Off-State Voltage and Repetitive Peak Reverse Voltage (1) VDRM & VRRM PA10SD 400 VOLT RMS On-State Current at Ta=57℃ and Conduction Angle of 180º IT(RMS) 1.0 AMP Peak Surge (Non-Repetitive)On-State Current, ½ Cycle ,at 50Hz or 60Hz ITSM 8 AMP Peak Gate-Trigger Current for 3µ sec , Max IGTM 1.0 AMP Peak Gate-Power Dissipation at IGT≦IGTM PGM 0.1 WATT Average Gate-Power Dissipation PG(AV) 0.01 WATT Peak gate reverse voltage VRGM 6 V Peak Off-State Current, (1)Ta=25℃ VDRM & VRRM=Max. Rating Ta=125℃ IDRM & IRRM 10 200 µA MAX Maximum On-State Voltage. (Peak) At Tc=25℃ and IT =Rated Amps VTM 1.7 VOLT MAX DC Holding Current,(1) IHO 10 mA MAX Critical Rate-Of-Rise of off-State Voltage.(1) Gate Open,Ta=110℃ Critical dv/dt 5 V/µ sec DC Gate –Trigger Current for Anode Voltage=7VDC, RL=100Ω IGT 200 µA MAX DC Gate –Trigger Voltage for Anode Voltage=7VDC, RL=100Ω VGT 0.8 VOLT MAX Gate-Controlled Turn-on Time tD+tR IGT=10mA Tgt 2.2 µ sec Thermal Resistance , Junction-to-Ambient RθJ-A 70 ℃ /WATT TYP Storage Temperature range Tstg -40 to + 150 ℃ Operating Temperature Range , Tj Toper -40 to + 110 ℃ FEATURES (1)RGK=1KΩ ■. Driven directly with IC and MOS device. ■. Feature proprietary, void-free glass passivated chips. ■. Available in voltage ratings from 200 to 600 volts. (VDRM and VRRM) ■. Sensitive gate trigger current. ■. Designed for high volume, line-powered control application in relay lamp drivers, small motor controls, gate drivers for large thyristors. Dimmension in mm SOT-89 Descriptions Mechanical Dimensions |
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Similar Description - PA10SD |
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