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FMC7G30US60 Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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FMC7G30US60 Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 9 page ©2001 Fairchild Semiconductor Corporation FMC7G30US60 Rev. A3 IGBT October 2001 FMC7G30US60 Compact & Complex Module General Description Fairchild’s Insulated Gate Bipolar Transistor (IGBT) power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature. Features • UL Certified No. E209204 • Short circuit rated 10us @ TC = 100°C, VGE = 15V • High speed switching • Low saturation voltage : VCE(sat) = 2.2 V @ IC = 30A • High input impedance • Built in brake and 3 phase rectifier circuit • Fast & soft anti-parallel FWD Applications • AC & DC motor controls • General purpose inverters • Robotics • Servo controls Internal Circuit Diagram R S T P N P1 B GB GU EU -GU GV EV -GV U GW EW V -GW W E Package Code : 21PM-BA Absolute Maximum Ratings T C = 25°C unless otherwise noted Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Symbol Description FMC7G30US60 Units Inverter & Brake VCES Collector-Emitter Voltage 600 V VGES Gate-Emitter Voltage ± 20 V IC Collector Current @ TC = 25°C30 A ICM (1) Pulsed Collector Current 60 A IF Diode Continuous Forward Current @ TC = 100°C30 A IFM Diode Maximum Forward Current 60 A PD Maximum Power Dissipation @ TC = 25°C 125 W TSC Short Circuit Withstand Time @ TC = 100°C10 us Converter VRRM Repetitive Peak Reverse Voltage 1200 V IO Average Output Rectified Current 30 A IFSM Surge Forward Current @ 1Cycle at 60Hz, Peak value Non-Repetitive 300 A I2t 1 Cycle Surge Current 369 A2s Common TJ Operating Junction Temperature -40 to +150 °C TSTG Storage Temperature Range -40 to +125 °C VISO Isolation Voltage @ AC 1minute 2500 V Mounting Torque Mounting part Screw @ M4 1.25 N.m |
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