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IXTP32N20T Datasheet(PDF) 2 Page - IXYS Corporation |
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IXTP32N20T Datasheet(HTML) 2 Page - IXYS Corporation |
2 / 6 page IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXTA32N20T IXTP32N20T Symbol Test Conditions Characteristic Values (T J = 25°C, Unless Otherwise Specified) Min. Typ. Max. g fs V DS = 10V, ID = 0.5 • ID25, Note 1 18 30 S C iss 1760 pF C oss V GS = 0V, VDS = 25V, f = 1MHz 212 pF C rss 31 pF t d(on) 14 ns t r 18 ns t d(off) 55 ns t f 31 ns Q g(on) 38 nC Q gs V GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 12 nC Q gd 13 nC R thJC 0.75 °C/W R thCH TO-220 0.50 °C/W Source-Drain Diode Symbol Test Conditions Characteristic Values (T J = 25°C, Unless Otherwise Specified) Min. Typ. Max. I S V GS = 0V 32 A I SM Repetitive, Pulse Width Limited by T JM 128 A V SD I F = IS, VGS = 0V, Note 1 1.2 V t rr 110 ns I RM 6.90 A Q RM 0.38 nC Notes: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. On through-hole packages, R DS(on) Kelvin test contact location must be 5mm or less from the package body. Resistive Switching Times V GS = 15V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 R G = 10Ω (External) I F = 0.5 • ID25, VGS = 0V -di/dt = 100A/ μs V R = 0.5 • VDSS IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 Pins: 1 - Gate 2 - Drain 3 - Source TO-220 Outline TO-263 Outline |
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