IXTQ90N15T datasheet(1/6 Pages) IXYS

Part #	IXTQ90N15T

Description	Preliminary Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode

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Manufacturer	IXYS [IXYS Corporation]

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Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 175°C

150

V

DGR

T

J

= 25

°C to 175°C, R

GS = 1MΩ

150

V

GSM

± 30

V

I

D25

T

C = 25°C *

90

A

I

LRMS

Lead Current Limit, RMS

75

A

I

DM

T

C = 25°C, pulse width limited by TJM

250

A

I

A

T

C =

25

°C4

A

E

AS

T

C =

25

°C

750

μJ

dV/dt

I

S ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C

10

V/ns

P

D

T

C = 25°C

455

W

T

J

-55 ... +175

°C

T

JM

175

°C

T

stg

-55 ... +175

°C

T

L

1.6mm (0.062 in.) from case for 10s

300

°C

T

SOLD

Plastic body for 10 seconds

260

°C

M

d

Mounting

Torque(TO-220,TO-3P,TO-247)

1.13/10

Nm/lb.in.

F

C

Mounting

Force (TO-263)

10..65/2.2..14.6

N/lb.

Weight

TO-263

2.5

g

TO-220

3

g

TO-3P

5.5

g

G = Gate

D = Drain

S = Source

TAB = Drain

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0V, ID = 250μA

150

V

GS(th)

V

DS = VGS, ID = 1mA

2.5

4.5

V

I

GSS

V

GS = ± 20V, VDS = 0V

± 200 nA

I

DSS

V

DS = VDSS

5

μA

V

GS = 0V

T

J = 150°C

250

μA

R

DS(on)

V

GS = 10V, ID = 0.5 • ID25, Note 1

17

20 m

Ω

Trench Gate

Power MOSFET

N-Channel Enhancement Mode

Avalanche Rated

Features

International standard packages

Unclamped Inductive Switching (UIS)

rated

Low package inductance

- easy to drive and to protect

V

DSS

= 150V

I

D25

=

90A

R

DS(on) ≤

≤≤≤≤

20m

Ω

DS99857(08/07)

IXTA90N15T

IXTH90N15T

IXTP90N15T

IXTQ90N15T

Preliminary Technical Information

TO-247

6

g

Applications

DC-DC converters

Battery chargers

Switched-mode and resonant-mode

power supplies

DC choppers

AC motor control

Uninterruptible power supplies

TO-220 (I

XTP)

TO-3P (IXTQ)

G

D

S

TO-247

(IXTH)

TO-263 (I

XTA)

G

S

(TAB)

G

D S

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