IXYS reserves the right to change limits, test conditions, and dimensions.

IXTH130N10T

IXTQ130N10T

2. On through-hole packages, R

location must be 5mm or less from the package body.

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

55

93

S

C

iss

5080

pF

C

oss

V

635

pF

C

rss

95

pF

t

d(on)

30

ns

t

r

47

ns

t

d(off)

44

ns

t

f

28

ns

Q

g(on)

104

nC

Q

gs

V

30

nC

Q

gd

29

nC

R

thJC

0.42

°C/W

R

thCH

0.25

°C/W

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

T

Min.

Typ.

Max.

I

S

V

130

A

I

SM

Repetitive, pulse width limited by T

JM

350

A

V

SD

I

1.0

V

t

rr

67

ns

I

RM

4.7

A

Q

rr

160

nC

I

-di/dt = 100A/

μs

V

Resistive Switching Times

V

R

TO-3P (IXTQ) Outline

Pins: 1 - Gate

2 - Drain

3 - Source 4, TAB - Drain

Dim.

Millimeter

Inches

Min.

Max.

Min. Max.

A

4.7

5.3

.185

.209

A

1

2.2

2.54

.087

.102

A

2

2.2

2.6

.059

.098

b

1.0

1.4

.040

.055

b

1

1.65

2.13

.065

.084

b

2

2.87

3.12

.113

.123

C

.4

.8

.016

.031

D

20.80 21.46

.819

.845

E

15.75 16.26

.610

.640

e

5.20

5.72 0.205 0.225

L

19.81 20.32

.780

.800

L1

4.50

.177

∅ P 3.55

3.65

.140

.144

Q

5.89

6.40 0.232 0.252

R

4.32

5.49

.170

.216

e

∅P

TO-247 (IXTH) Outline

1

2

3

Terminals: 1 - Gate

2 - Drain