IXTA86N20T datasheet(5/6 Pages) IXYS

Part #	IXTA86N20T

Description	Trench Gate Power MOSFET N-Channel Enhancement Mode Avalanche Rated

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Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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5 / 6 page

Fig. 14. Resistiv e Turn-on

Rise Time v s. Drain Current

9

11

13

15

17

19

21

23

25

27

20

25

30

35

40

45

50

55

60

65

70

75

80

85

90

ID - Amperes

RG = 3.3Ω

VGS = 15V

VDS = 100V

TJ = 125ºC

TJ = 25ºC

Fig. 15. Resistiv e Turn-on

Switching Times v s. Gate Resistance

10

12

14

16

18

20

22

24

26

28

30

32

34

5

6

78

9

10

11

12

13

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15

RG - Ohms

18

19

20

21

22

23

t r

td(on) - - - -

TJ = 125ºC, VGS = 15V

VDS = 100V

I D = 86A

I D = 43A

Fig. 16. Resistiv e Turn-off

Switching Times v s. Junction Temperature

14

16

18

20

22

24

26

28

30

32

25

35

45

55

65

75

85

95

105

115

125

TJ - Degrees Centigrade

48

50

52

54

56

58

60

62

64

66

t f

td(off) - - - -

RG = 3.3Ω, VGS = 15V

VDS = 100V

I D = 43A

I D = 86A

Fig. 17. Resistiv e Turn-off

Switching Times v s. Drain Current

12

14

16

18

20

22

24

26

28

30

32

34

20 25 30 35 40 45 50 55 60 65 70 75 80 85 90

ID - Amperes

46

48

50

52

54

56

58

60

62

64

66

68

t f

td(off) - - - -

RG = 3.3Ω, VGS = 15V

VDS = 100V

TJ = 125ºC

TJ = 25ºC

TJ = 125ºC

TJ = 25ºC

Fig. 13. Resistiv e Turn-on

Rise Time v s. Junction Temperature

10

12

14

16

18

20

22

24

26

25

35

45

55

65

75

85

95

105

115

125

TJ - Degrees Centigrade

RG = 3.3Ω

VGS = 15V

VDS = 100V

I D = 86A

I D = 43A

Fig. 18. Resistiv e Turn-off

Switching Times v s. Gate Resistance

10

15

20

25

30

35

40

45

50

55

60

65

70

3

4

5

6

7

8

9

10

111213

1415

RG - Ohms

50

60

70

80

90

100

110

120

130

140

150

160

170

t f

td(off) - - - -

TJ = 125ºC, VGS = 15V

VDS = 100V

I D = 43A, 86A

IXTA 86N20T

IXTP 86N20T

IXTQ 86N20T

IXYS REF: T_86N20T (6E) 6-30-06

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