VS-19TQ015PbF, VS-19TQ015-N3

www.vishay.com

Vishay Semiconductors

Revision: 25-Aug-11

2

Document Number: 94151

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Note

ELECTRICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum forward voltage drop

See fig. 1

19 A

0.36

V

38 A

0.46

19 A

0.32

38 A

0.43

Maximum reverse leakage current

See fig. 2

465

mA

285

10.5

522

Maximum junction capacitance

2000

pF

Typical series inductance

Measured lead to lead 5 mm from package body

8.0

nH

Maximum voltage rate of change

dV/dt

10 000

V/µs

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum junction temperature range

- 55 to 125

°C

Maximum storage temperature range

- 55 to 150

Maximum thermal resistance,

junction to case

DC operation

See fig. 4

1.50

°C/W

Typical thermal resistance,

case to heatsink

Mounting surface, smooth and greased

0.50

Approximate weight

2g

0.07

oz.

Mounting torque

minimum

6 (5)

kgf · cm

(lbf · in)

maximum

12 (10)

Marking device

Case style TO-220AC

19TQ015