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IXTA160N075T Datasheet(PDF) 2 Page - IXYS Corporation

Part # IXTA160N075T
Description  Preliminary Technical Information TrenchMVTM Power MOSFET
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXTA160N075T Datasheet(HTML) 2 Page - IXYS Corporation

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IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA160N075T
IXTP160N075T
Symbol
Test Conditions
Characteristic Values
(T
J = 25°C unless otherwise specified)
Min.
Typ.
Max.
g
fs
V
DS= 10 V; ID = 60 A, Note 1
65
100
S
C
iss
4950
pF
C
oss
V
GS = 0 V, VDS = 25 V, f = 1 MHz
790
pF
C
rss
145
pF
t
d(on)
Resistive Switching Times
29
n s
t
r
V
GS = 10 V, VDS = 0.5 VDSS, ID = 25 A
64
ns
t
d(off)
R
G = 5 Ω (External)
60
ns
t
f
60
ns
Q
g(on)
112
nC
Q
gs
V
GS= 10 V, VDS = 0.5 VDSS, ID = 25 A
30
nC
Q
gd
30
nC
R
thJC
0.42
°C/W
R
thCH
TO-220
0.50
°C/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
T
J = 25°C unless otherwise specified)
Min.
Typ.
Max.
I
S
V
GS = 0 V
160
A
I
SM
Pulse width limited by T
JM
430
A
V
SD
I
F = 25 A, VGS = 0 V, Note 1
1.0
V
t
rr
I
F = 25 A, -di/dt = 100 A/μs80
ns
V
R = 40 V, VGS = 0 V
Notes: 1. Pulse test, t
≤ 300 μs, duty cycle d ≤ 2 %;
2. On through-hole packages, R
DS(on)
Kelvin test contact
location must be 5 mm or less from the package body.
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.06
4.83
.160
.190
A1
2.03
2.79
.080
.110
b
0.51
0.99
.020
.039
b2
1.14
1.40
.045
.055
c
0.46
0.74
.018
.029
c2
1.14
1.40
.045
.055
D
8.64
9.65
.340
.380
D1
7.11
8.13
.280
.320
E
9.65
10.29
.380
.405
E1
6.86
8.13
.270
.320
e
2.54
BSC
.100
BSC
L
14.61
15.88
.575
.625
L1
2.29
2.79
.090
.110
L2
1.02
1.40
.040
.055
L3
1.27
1.78
.050
.070
L4
0
0.38
0
.015
R
0.46
0.74
.018
.029
TO-263 (IXTA) Outline
Pins:
1 - Gate
2 - Drain
3 - Source
4, TAB - Drain
Pins:
1 - Gate
2 - Drain
3 - Source
4, TAB - Drain
TO-220 (IXTP) Outline
PRELIMINARYTECHNICALINFORMATION
The product presented herein is under development. The Technical Specifications
offered are derived from data gathered during objective characterizations of preliminary
engineering lots; but also may yet contain some information supplied during a pre-
production design evaluation. IXYS reserves the right to change limits, test conditions,
and dimensions without notice.
IXYS MOSFETs and IGBTs are covered by
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065B1
6,683,344
6,727,585
7,005,734B2
one or moreof the following U.S. patents:
4,850,072
5,017,508
5,063,307
5,381,025
6,259,123B1
6,534,343
6,710,405B2
6,759,692
7,063,975B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6771478B2
7,071,537


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