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IXTA160N075T Datasheet(PDF) 2 Page - IXYS Corporation |
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IXTA160N075T Datasheet(HTML) 2 Page - IXYS Corporation |
2 / 5 page IXYS reserves the right to change limits, test conditions, and dimensions. IXTA160N075T IXTP160N075T Symbol Test Conditions Characteristic Values (T J = 25°C unless otherwise specified) Min. Typ. Max. g fs V DS= 10 V; ID = 60 A, Note 1 65 100 S C iss 4950 pF C oss V GS = 0 V, VDS = 25 V, f = 1 MHz 790 pF C rss 145 pF t d(on) Resistive Switching Times 29 n s t r V GS = 10 V, VDS = 0.5 VDSS, ID = 25 A 64 ns t d(off) R G = 5 Ω (External) 60 ns t f 60 ns Q g(on) 112 nC Q gs V GS= 10 V, VDS = 0.5 VDSS, ID = 25 A 30 nC Q gd 30 nC R thJC 0.42 °C/W R thCH TO-220 0.50 °C/W Source-Drain Diode Symbol Test Conditions Characteristic Values T J = 25°C unless otherwise specified) Min. Typ. Max. I S V GS = 0 V 160 A I SM Pulse width limited by T JM 430 A V SD I F = 25 A, VGS = 0 V, Note 1 1.0 V t rr I F = 25 A, -di/dt = 100 A/μs80 ns V R = 40 V, VGS = 0 V Notes: 1. Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %; 2. On through-hole packages, R DS(on) Kelvin test contact location must be 5 mm or less from the package body. Dim. Millimeter Inches Min. Max. Min. Max. A 4.06 4.83 .160 .190 A1 2.03 2.79 .080 .110 b 0.51 0.99 .020 .039 b2 1.14 1.40 .045 .055 c 0.46 0.74 .018 .029 c2 1.14 1.40 .045 .055 D 8.64 9.65 .340 .380 D1 7.11 8.13 .280 .320 E 9.65 10.29 .380 .405 E1 6.86 8.13 .270 .320 e 2.54 BSC .100 BSC L 14.61 15.88 .575 .625 L1 2.29 2.79 .090 .110 L2 1.02 1.40 .040 .055 L3 1.27 1.78 .050 .070 L4 0 0.38 0 .015 R 0.46 0.74 .018 .029 TO-263 (IXTA) Outline Pins: 1 - Gate 2 - Drain 3 - Source 4, TAB - Drain Pins: 1 - Gate 2 - Drain 3 - Source 4, TAB - Drain TO-220 (IXTP) Outline PRELIMINARYTECHNICALINFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre- production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6771478B2 7,071,537 |
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