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IXTQ200N075T Datasheet(PDF) 1 Page - IXYS Corporation |
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IXTQ200N075T Datasheet(HTML) 1 Page - IXYS Corporation |
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1 / 5 page  © 2006 IXYS CORPORATION All rights reserved DS99634 (11/06) Symbol Test Conditions Maximum Ratings V DSS T J = 25 °C to 175°C75 V V DGR T J = 25 °C to 175°C; R GS = 1 MΩ 75 V V GSM Transient ± 20 V I D25 T C = 25°C 200 A I LRMS Lead Current Limit, RMS 75 A I DM T C = 25°C, pulse width limited by TJM 540 A I AR T C = 25°C25 A E AS T C = 25°C 750 mJ dv/dt I S ≤ I DM, di/dt ≤ 100 A/μs, VDD ≤ VDSS 3 V/ns T J ≤ 175°C, R G = 5 Ω P D T C = 25°C 430 W T J -55 ... +175 °C T JM 175 °C T stg -55 ... +175 °C T L 1.6 mm (0.062 in.) from case for 10 s 300 °C T SOLD Plastic body for 10 seconds 260 °C M d Mounting torque 1.13 / 10 Nm/lb.in. Weight TO-3P 5.5 g TO-247 6 g Symbol Test Conditions Characteristic Values (T J = 25°C unless otherwise specified) Min. Typ. Max. BV DSS V GS = 0 V, I D = 250 μA75 V V GS(th) V DS = VGS, ID = 250 μA 2.0 4.0 V I GSS V GS = ± 20 V, VDS = 0 V ± 200 nA I DSS V DS = VDSS 5 μA V GS = 0 V T J = 150°C 250 μA R DS(on) V GS = 10 V, ID = 25 A, Notes 1, 2 4.0 5.0 m Ω Trench Gate Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH200N075T IXTQ200N075T V DSS =75 V I D25 = 200 A R DS(on) ≤ ≤≤≤≤ 5.0 m Ω Ω Ω Ω Ω Features International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages Easy to mount Space savings High power density TO-3P (IXTQ) Preliminary Technical Information G D S TO-247 (IXTH) G S D G = Gate D = Drain S = Source TAB = Drain (TAB) (TAB) |
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