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IXTQ160N10T Datasheet(PDF) 5 Page - IXYS Corporation

Part # IXTQ160N10T
Description  Preliminary Technical Information TrenchMVTM Power MOSFET
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXTQ160N10T Datasheet(HTML) 5 Page - IXYS Corporation

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© 2006 IXYS CORPORATION All rights reserved
IXTH160N10T
IXTQ160N10T
IXYS REF: T_160N10T (5V) 11-16-06-A.xls
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
30
35
40
45
50
55
60
65
70
25
30
35
40
45
50
ID - Amperes
RG = 5
Ω
VGS = 10V
VDS = 50V
TJ = 25ºC
TJ = 125ºC
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
30
50
70
90
110
130
150
170
4
6
8
10
12
14
16
18
20
RG - Ohms
30
35
40
45
50
55
60
65
t r
td(on) - - - -
TJ = 125ºC, VGS = 10V
VDS = 50V
I D = 50A
I D = 25A
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
30
35
40
45
50
55
60
65
70
75
80
85
90
25
35
45
55
65
75
85
95
105
115 125
TJ - Degrees Centigrade
60
65
70
75
80
85
90
95
100
105
110
115
120
t f
td(off) - - - -
RG = 5
Ω, VGS = 10V
VDS = 50V
I D = 50A
I D = 50A
I D = 25A
I D = 25A
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
38
39
40
41
42
43
44
25
30
35
40
45
50
ID - Amperes
44
47
50
53
56
59
62
65
68
71
74
77
80
t f
td(off) - - - -
RG = 5
Ω, VGS = 10V
VDS = 50V
TJ = 125ºC
TJ = 25ºC
TJ = 125ºC
TJ = 25ºC
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
20
30
40
50
60
70
80
90
25
35
45
55
65
75
85
95
105
115
125
TJ - Degrees Centigrade
RG = 5
Ω
VGS = 10V
VDS = 50V
I D = 50A
I D = 25A
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
30
40
50
60
70
80
90
100
110
120
130
140
4
6
8
1012
1416
1820
RG - Ohms
40
55
70
85
100
115
130
145
160
175
190
205
t f
td(off) - - - -
TJ = 125ºC, VGS = 10V
VDS = 50V
I D = 25A
I D = 50A


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