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FGH40T65UPD Datasheet(PDF) 5 Page - Fairchild Semiconductor

Part # FGH40T65UPD
Description  650 V, 40 A Field Stop Trench IGBT
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Manufacturer  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FGH40T65UPD Datasheet(HTML) 5 Page - Fairchild Semiconductor

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©2012 Fairchild Semiconductor Corporation
5
www.fairchildsemi.com
FGH40T65UPD Rev. C0
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
Figure 8. Saturation Voltage vs. VGE
Figure 9. Capacitance Characteristics
Figure 10. Gate charge Characteristics
Figure 11. SOA Characteristics
Figure 12. Turn-on Characteristics vs.
Gate Resistance
4
8
12
16
20
0
4
8
12
16
20
IC = 20A
40A
80A
Common Emitter
T
C = 25
o
C
Gate-Emitter Voltage, VGE [V]
4
8
12
16
20
0
4
8
12
16
20
80A
IC = 20A
40A
Common Emitter
TC = 175
o
C
Gate-Emitter Voltage, VGE [V]
110
30
100
1000
10000
Common Emitter
VGE = 0V, f = 1MHz
TC = 25
o
C
C
res
C
oes
C
ies
Collector-Emitter Voltage, VCE [V]
30
0
30
60
90
120
150
180
0
3
6
9
12
15
300V
Common Emitter
TC = 25
o
C
200V
V
CC = 400V
Gate Charge, Qg [nC]
0.1
1
10
100
1000
0.01
0.1
1
10
100
1000
1ms
10 ms
DC
*Notes:
1. TC = 25
o
C
2. TJ = 175
o
C
3. Single Pulse
10
μs
100
μs
Collector-Emitter Voltage, VCE [V]
0
1020304050
5
10
100
Common Emitter
VCC = 400V, VGE = 15V
IC = 40A
TC = 25
o
C
TC = 175
o
C
t
d(on)
t
r
Gate Resistance, RG [
Ω]


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