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TS3USB30ERSWR Datasheet(PDF) 1 Page - Texas Instruments |
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TS3USB30ERSWR Datasheet(HTML) 1 Page - Texas Instruments |
1 / 20 page RSW PACKAGE (TOP VIEW) 1 2 5 8 4 9 3 10 6 7 D– GND D+ OE V CC S RSW PACKAGE (BOTTOM VIEW) D+ 1 2 3 10 4 9 5 8 6 7 GND D– S V CC OE TS3USB30E www.ti.com SCDS255E – DECEMBER 2008 – REVISED AUGUST 2012 ESD PROTECTED, HIGH-SPEED USB 2.0 (480-Mbps) 1:2 MULTIPLEXER/DEMULTIPLEXER SWITCH WITH SINGLE ENABLE Check for Samples: TS3USB30E 1 FEATURES • VCC Operation at 3 V to 4.3 V • 1.8-V Compatible Control-Pin Inputs • IOFF Supports Partial Power-Down-Mode Operation – D+/D– Pins Tolerate up to 5.25V • rON = 10 Ω Max • ΔrON = 0.35 Ω Typ • Cio(ON) = 7.5 pF Typ • Low Power Consumption (1 μA Max) • –3 dB Bandwidth = 900 MHz Typ • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II (1) • ESD Performance Tested Per JESD 22 – 8000-V Human-Body Model (A114-B, Class II) – 1000-V Charged-Device Model (C101) • ESD Performance I/O Port to GND (2) – 15000-V Human-Body Model • Packaged in 10-pin TQFN (1.4 mm × 1.8 mm) APPLICATIONS • Routes Signals for USB 1.0, 1.1, and 2.0 DGS PACKAGE (TOP VIEW) (1) Except OE and S inputs (2) High-voltage HBM is performed in addition to the standard HBM testing (A114-B, Class II) and applies to I/O ports tested with respect to GND only. 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PRODUCTION DATA information is current as of publication date. Copyright © 2008–2012, Texas Instruments Incorporated Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. |
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