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MJD44H11-1G Datasheet(PDF) 2 Page - ON Semiconductor |
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MJD44H11-1G Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 9 page MJD44H11, NJVMJD44H11 (NPN), MJD45H11, NJVMJD45H11 (PNP) http://onsemi.com 2 MAXIMUM RATINGS (TA = 25_C, common for NPN and PNP, minus sign, “−”, for PNP omitted, unless otherwise noted) Rating Symbol Max Unit Collector−Emitter Voltage VCEO 80 Vdc Emitter−Base Voltage VEB 5 Vdc Collector Current − Continuous − Peak IC 8 16 Adc Total Power Dissipation @ TC = 25°C Derate above 25°C PD 20 0.16 W W/°C Total Power Dissipation (Note 1) @ TA = 25°C Derate above 25°C PD 1.75 0.014 W W/°C Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 6.25 °C/W Thermal Resistance, Junction−to−Ambient (Note 1) RqJA 71.4 °C/W Lead Temperature for Soldering TL 260 °C 1. These ratings are applicable when surface mounted on the minimum pad sizes recommended. |
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