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LM7705 Datasheet(PDF) 1 Page - Texas Instruments

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Part # LM7705
Description  LM7705 Low Noise Negative Bias Generator
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

LM7705 Datasheet(HTML) 1 Page - Texas Instruments

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LM7705
+
-
CRES
CFLY
COUT
+ In
- In
shutdown
low voltage
amplifier
true zero
output voltage
-V
+V
+V
-0.23V
CF+
VSS
SD
VDD
VSS
VOUT
CRES
CF-
LM7705
www.ti.com
SNVS420B – NOVEMBER 2008 – REVISED MARCH 2013
LM7705 Low Noise Negative Bias Generator
Check for Samples: LM7705
1
FEATURES
DESCRIPTION
The LM7705 is a switched capacitor voltage inverter
2
Regulated Output Voltage
−0.232V
with a low noise,
−0.23V fixed negative voltage
Output Voltage Tolerance 5%
regulator. This device is designed to be used with low
Output Voltage Ripple 4 mVPP
voltage amplifiers to enable the amplifiers output to
swing to zero volts. The
−0.23 volts is used to supply
Max Output Current 26 mA
the
negative
supply
pin
of
an
amplifier
while
Supply Voltage 3V to 5.25V
maintaining less then 5.5 volts across the amplifier.
Conversion Efficiency up to 98%
Rail-to-Rail output amplifiers cannot output zero volts
when operating from a single supply voltage and can
Quiescent Current 78 µA
result in error accumulation due to amplifier output
Shutdown Current 20 nA
saturation voltage being amplified by following gain
Turn on Time 500 µs
stages. A small negative supply voltage will prevent
the amplifiers output from saturating at zero volts and
Operating Temperature Range
−40°C to 125°C
will help maintain an accurate zero through a signal
8-Pin VSSOP Package
processing chain. Additionally, when an amplifier is
used to drive an ADC’s input, it can output a zero
APPLICATIONS
voltage signal and the full input range of an ADC can
True Zero Amplifier Output
be used. The LM7705 has a shutdown pin to
minimize standby power consumption
Portable Instrumentation
Low Voltage Split Power Supplies
Typical Application
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Copyright © 2008–2013, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.


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