SI2305DS-T1-E3 datasheet(1/8 Pages) VISHAY

Part #	SI2305DS-T1-E3

Description	P-Channel 1.25-W, 1.8-V (G-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Vishay Siliconix

Si2305DS

Document Number: 70833

S09-0133-Rev. E, 02-Feb-09

www.vishay.com

1

P-Channel 1.25-W, 1.8-V (G-S) MOSFET

FEATURES

•

Halogen-free According to IEC 61249-2-21

Available

• TrenchFET® Power MOSFETs: 1.8 V Rated

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)ID (A)

- 8

0.052 at VGS = - 4.5 V

± 3.5

0.071 at VGS = - 2.5 V

± 3

0.108 at VGS = - 1.8 V

± 2

G

TO-236

(SOT-23)

S

D

Top View

2

3

1

Si2305DS (A5)*

* Marking Code

Ordering Information: Si2305DS-T1

Si2305DS-T1-E3 (Lead (Pb)-free)

Si2305DS-T1-GE3 (Lead (Pb)-free and Halogen-free)

Notes:

a. Surface Mounted on FR4 board.

b. t

≤ 5 s.

* Pb containing terminations are not RoHS compliant, exemptions may apply.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

- 8

V

Gate-Source Voltage

VGS

± 8

Continuous Drain Current (TJ = 150 °C)

TA = 25 °C

ID

± 3.5

A

TA = 70 °C

± 2.8

Pulsed Drain Current

IDM

± 12

Continuous Source Current (Diode Conduction)a, b

IS

- 1.6

Maximum Power Dissipationa, b

TA = 25 °C

PD

1.25

W

TA = 70 °C

0.8

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambienta

t

≤ 5 s

RthJA

100

°C/W

Steady State

130

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SI2305DS-T1-E3 Datasheet(PDF) 1 Page - Vishay Siliconix

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